@inproceedings{73396fa8b1074b6fae3ab11fd8ccceb1,
title = "Defects generation and annihilation in GaN grown on patterned silicon substrate",
abstract = "The behavior of threading dislocations and stacking faults were investigated in a (1-101) GaN grown on a patterned (001)Si substrate by selective metal-organic-vapor-phase-epitaxy with an AlN buffer layer. Cross sectional transmission electron microscopy images showed that threading dislocations are generated at the hetero-interface of GaN/AlN/Si induced by misfit dislocations, while stacking faults are generated when two crystals with different crystal axes coalesce. We found some of them are annihilated making a loop, where two stacking faults have been generated at a short distance. This suggests a rout to decrease the density of stacking faults in III nitrides.",
keywords = "GaN, MOVPE, Semi-polar, Si substrate, Stacking fault, Threading dislocation",
author = "N. Sawaki and S. Ito and T. Nakagit and H. Iwat and T. Tanikawa and M. Irie and Y. Honda and M. Yamaguchi and H. Amano",
year = "2013",
doi = "10.1117/12.2002738",
language = "English",
isbn = "9780819493941",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Gallium Nitride Materials and Devices VIII",
note = "SPIE Symposium on Gallium Nitride Materials and Devices VIII ; Conference date: 04-02-2013 Through 07-02-2013",
}