Defects in ga⁺ ion implanted gaas-alas mqw structures

Cross-sectional transmission electron microscope observation was performed on GaAs-AlAs multi-quantum-well (MQW) structures which were compositionally disordered by ion implantation of the constituent element Ga⁺ and subsequent heat-treatment, and compared with MQW structures implanted by other species of ions As⁺, Si⁺ and Ar⁺. It was found that most of the defects introduced by ion implantation of Ga⁺ are annealed out by heat treatment at 750°C for 60 minutes, and that this is also the case for defects introduced by ion implantation by another constituent element As⁺, while many of the defects introduced by Si⁺ and Ar⁺ ion implantation remain without being annealed out.