TY - JOUR
T1 - Delocalization of the f electron in CexLa1-xRu 2Si2 - The de Haas-van Alphen effect measurement
AU - Matsumoto, Y.
AU - Kimura, N.
AU - Komatsubara, T.
AU - Aoki, H.
AU - Kurita, N.
AU - Terashima, T.
AU - Uji, S.
PY - 2012
Y1 - 2012
N2 - We report the first observation of the continuous Fermi surface (FS) variation from La compound (LaRu2Si2) with no f electron to Ce compound (CeRu2Si2) with itinerant f electron via the de Haas-van Alphen (dHvA) effect. The dHvA frequency smoothly varies with Ce concentration and there is no discontinuous change with Ce concentration. It is found that the effective mass and signal amplitude with Ce concentration depends strongly on the Fermi surface sheet, and the effective mass is enhanced toward xc (= 0.91) and the signal amplitude reduces around xc or somewhere between xc and x ∼ 0.8.
AB - We report the first observation of the continuous Fermi surface (FS) variation from La compound (LaRu2Si2) with no f electron to Ce compound (CeRu2Si2) with itinerant f electron via the de Haas-van Alphen (dHvA) effect. The dHvA frequency smoothly varies with Ce concentration and there is no discontinuous change with Ce concentration. It is found that the effective mass and signal amplitude with Ce concentration depends strongly on the Fermi surface sheet, and the effective mass is enhanced toward xc (= 0.91) and the signal amplitude reduces around xc or somewhere between xc and x ∼ 0.8.
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U2 - 10.1088/1742-6596/391/1/012042
DO - 10.1088/1742-6596/391/1/012042
M3 - Conference article
AN - SCOPUS:84874914085
SN - 1742-6588
VL - 391
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - 1
M1 - 012042
T2 - International Conference on Strongly Correlated Electron Systems, SCES 2011
Y2 - 29 August 2011 through 3 September 2011
ER -