TY - GEN
T1 - Demonstrating distribution of SILC values at individual leakage spots
AU - Inatsuka, Takuya
AU - Kuroda, Rihito
AU - Teramoto, Akinobu
AU - Kumagai, Yuki
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
PY - 2013
Y1 - 2013
N2 - Stress induced leakage current (SILC) in the order of 10-17 to 10-13 A were statistically evaluated by using an advanced test circuit. In this paper, the distribution of SILC was evaluated by changing measurement electric fields, electric stress intensities, device area, and oxide thickness. The distribution of SILC is determined by the current values at individual leakage spots when the device area is sufficiently small. When the electric stress intensity and the measurement field are small, the distribution of logarithm of SILC follows the Gumbel distribution because the maximum current values of the leakage spots determine the gate leakage current in small area MOSFETs. We also evaluated the time-dependent characteristics of SILC in small area MOSFETs. The random telegraph signals of gate leakage current were observed which also indicates the current values of individual leakage spots.
AB - Stress induced leakage current (SILC) in the order of 10-17 to 10-13 A were statistically evaluated by using an advanced test circuit. In this paper, the distribution of SILC was evaluated by changing measurement electric fields, electric stress intensities, device area, and oxide thickness. The distribution of SILC is determined by the current values at individual leakage spots when the device area is sufficiently small. When the electric stress intensity and the measurement field are small, the distribution of logarithm of SILC follows the Gumbel distribution because the maximum current values of the leakage spots determine the gate leakage current in small area MOSFETs. We also evaluated the time-dependent characteristics of SILC in small area MOSFETs. The random telegraph signals of gate leakage current were observed which also indicates the current values of individual leakage spots.
KW - electric stress
KW - Gumbel distribution
KW - random telegraph signal
KW - stress induced leakage current
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U2 - 10.1109/IRPS.2013.6532088
DO - 10.1109/IRPS.2013.6532088
M3 - Conference contribution
AN - SCOPUS:84880979674
SN - 9781479901135
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - GD.5.1-GD.5.6
BT - 2013 IEEE International Reliability Physics Symposium, IRPS 2013
T2 - 2013 IEEE International Reliability Physics Symposium, IRPS 2013
Y2 - 14 April 2013 through 18 April 2013
ER -