Demonstration, analysis, and device design considerations for independent DG MOSFETs

Meishoku Masahara; Yongxun Liu; Kunihiro Sakamoto; Kazuhiko Endo; Takashi Matsukawa; Kenichi Ishii; Toshihiro Sekigawa; Hiromi Yamauchi; Hisao Tanoue; Seigo Kanemaru; Hanpei Koike; Eiichi Suzuki

doi:10.1109/TED.2005.855063

Demonstration, analysis, and device design considerations for independent DG MOSFETs

Meishoku Masahara, Yongxun Liu, Kunihiro Sakamoto, Kazuhiko Endo, Takashi Matsukawa, Kenichi Ishii, Toshihiro Sekigawa, Hiromi Yamauchi, Hisao Tanoue, Seigo Kanemaru, Hanpei Koike, Eiichi Suzuki

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Contribution to journal › Article › peer-review

124 Citations (Scopus)

Abstract

This paper describes a comprehensive study on the threshold voltage (V_th) controllability of four-terminal-driven double-gate (DG) MOSFETs (4T-XMOSFETs) with independently switched DGs. Two types of 4T-XMOSFETs (fin and vertical) are experimentally demonstrated and their V_th controllability is thoroughly investigated in relation to the initial V_th in the DG-mode based on comprehensible modeling of the devices. Based on the investigation and simulated predictions, device design guidelines for 4T-XMOSFETs are proposed. Decreasing the workfunction of the DGs and increasing the oxide thickness of the second gate (T_o×2) are preferable for improving the performance of the 4T-XMOSFET. The optimum workfunction of DGs for attaining low I_{off(stand-by)} and high I_on(active) under the limited V_g2 condition is also proposed.

Original language	English
Pages (from-to)	2046-2053
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	9
DOIs	https://doi.org/10.1109/TED.2005.855063
Publication status	Published - 2005 Sept

Keywords

4T-XMOSFET
FinFET
Gate workfunction
Independent double-gate (DG) MOSFET
Second gate oxide thickness
V controllability
Vertical DGMOSFET
XMOSFET

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title = "Demonstration, analysis, and device design considerations for independent DG MOSFETs",

abstract = "This paper describes a comprehensive study on the threshold voltage (Vth) controllability of four-terminal-driven double-gate (DG) MOSFETs (4T-XMOSFETs) with independently switched DGs. Two types of 4T-XMOSFETs (fin and vertical) are experimentally demonstrated and their Vth controllability is thoroughly investigated in relation to the initial Vth in the DG-mode based on comprehensible modeling of the devices. Based on the investigation and simulated predictions, device design guidelines for 4T-XMOSFETs are proposed. Decreasing the workfunction of the DGs and increasing the oxide thickness of the second gate (To×2) are preferable for improving the performance of the 4T-XMOSFET. The optimum workfunction of DGs for attaining low Ioff(stand-by) and high Ion(active) under the limited Vg2 condition is also proposed.",

keywords = "4T-XMOSFET, FinFET, Gate workfunction, Independent double-gate (DG) MOSFET, Second gate oxide thickness, V controllability, Vertical DGMOSFET, XMOSFET",

author = "Meishoku Masahara and Yongxun Liu and Kunihiro Sakamoto and Kazuhiko Endo and Takashi Matsukawa and Kenichi Ishii and Toshihiro Sekigawa and Hiromi Yamauchi and Hisao Tanoue and Seigo Kanemaru and Hanpei Koike and Eiichi Suzuki",

note = "Funding Information: Manuscript received February 9, 2005; revised June 7, 2005. This work was supported in part by the program for the support of young researchers from the Ministry of Education, Culture, Sports, Science and Technology. The review of this paper was arranged by Editor T. Skotnicki.",

year = "2005",

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language = "English",

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T1 - Demonstration, analysis, and device design considerations for independent DG MOSFETs

AU - Masahara, Meishoku

AU - Liu, Yongxun

AU - Sakamoto, Kunihiro

AU - Endo, Kazuhiko

AU - Matsukawa, Takashi

AU - Ishii, Kenichi

AU - Sekigawa, Toshihiro

AU - Yamauchi, Hiromi

AU - Tanoue, Hisao

AU - Kanemaru, Seigo

AU - Koike, Hanpei

AU - Suzuki, Eiichi

N1 - Funding Information: Manuscript received February 9, 2005; revised June 7, 2005. This work was supported in part by the program for the support of young researchers from the Ministry of Education, Culture, Sports, Science and Technology. The review of this paper was arranged by Editor T. Skotnicki.

PY - 2005/9

Y1 - 2005/9

N2 - This paper describes a comprehensive study on the threshold voltage (Vth) controllability of four-terminal-driven double-gate (DG) MOSFETs (4T-XMOSFETs) with independently switched DGs. Two types of 4T-XMOSFETs (fin and vertical) are experimentally demonstrated and their Vth controllability is thoroughly investigated in relation to the initial Vth in the DG-mode based on comprehensible modeling of the devices. Based on the investigation and simulated predictions, device design guidelines for 4T-XMOSFETs are proposed. Decreasing the workfunction of the DGs and increasing the oxide thickness of the second gate (To×2) are preferable for improving the performance of the 4T-XMOSFET. The optimum workfunction of DGs for attaining low Ioff(stand-by) and high Ion(active) under the limited Vg2 condition is also proposed.

AB - This paper describes a comprehensive study on the threshold voltage (Vth) controllability of four-terminal-driven double-gate (DG) MOSFETs (4T-XMOSFETs) with independently switched DGs. Two types of 4T-XMOSFETs (fin and vertical) are experimentally demonstrated and their Vth controllability is thoroughly investigated in relation to the initial Vth in the DG-mode based on comprehensible modeling of the devices. Based on the investigation and simulated predictions, device design guidelines for 4T-XMOSFETs are proposed. Decreasing the workfunction of the DGs and increasing the oxide thickness of the second gate (To×2) are preferable for improving the performance of the 4T-XMOSFET. The optimum workfunction of DGs for attaining low Ioff(stand-by) and high Ion(active) under the limited Vg2 condition is also proposed.

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KW - XMOSFET

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Demonstration, analysis, and device design considerations for independent DG MOSFETs

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