Demonstration, analysis, and device design considerations for independent DG MOSFETs

Meishoku Masahara, Yongxun Liu, Kunihiro Sakamoto, Kazuhiko Endo, Takashi Matsukawa, Kenichi Ishii, Toshihiro Sekigawa, Hiromi Yamauchi, Hisao Tanoue, Seigo Kanemaru, Hanpei Koike, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

124 Citations (Scopus)


This paper describes a comprehensive study on the threshold voltage (Vth) controllability of four-terminal-driven double-gate (DG) MOSFETs (4T-XMOSFETs) with independently switched DGs. Two types of 4T-XMOSFETs (fin and vertical) are experimentally demonstrated and their Vth controllability is thoroughly investigated in relation to the initial Vth in the DG-mode based on comprehensible modeling of the devices. Based on the investigation and simulated predictions, device design guidelines for 4T-XMOSFETs are proposed. Decreasing the workfunction of the DGs and increasing the oxide thickness of the second gate (To×2) are preferable for improving the performance of the 4T-XMOSFET. The optimum workfunction of DGs for attaining low Ioff(stand-by) and high Ion(active) under the limited Vg2 condition is also proposed.

Original languageEnglish
Pages (from-to)2046-2053
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number9
Publication statusPublished - 2005 Sept


  • FinFET
  • Gate workfunction
  • Independent double-gate (DG) MOSFET
  • Second gate oxide thickness
  • V controllability
  • Vertical DGMOSFET


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