Demonstration and analysis of accumulation-mode double-gate metal-oxide-semiconductor field-effect transistor

Meishoku Masahara, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Shinichi O'Uchi, Kenichi Ishii, Etsuro Sugimata, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The property of an accumulation-mode double-gate (DO) metal-oxide- semiconductor field-effect transistor (MOSFET) has thoroughly been investigated on the basis of experimental data and simulation results. Both accumulation- and inversion-mode DG-MOSFETs have been fabricated by novel vertical DG-MOSFET fabrication process technology. It is experimentally demonstrated that accumulation-mode DG-MOSFETs show a severe influence of channel thickness (TSi) on threshold voltage (Vth) and subthreshold slope (S) as compared with inversion-mode ones. By decreasing TSi, however, S is dramatically improved to the same value as that for the inversion-mode one. The short-channel effects (SCEs) for the accumulation-mode DG-MOSFETs have been explored using device simulation. The simulation result shows that, by decreasing TSi to 10nm, the trend of the SCEs for the accumulation-mode DG-MOSFETs becomes the same as that for the inversion-mode one down to an effective gate length of 10 nm. It is also demonstrated that, by using n+-DGs, an appropriate Vth as well as a low S can be attained for an accumulation-mode PMOS vertical DG-MOSFET.

Original languageEnglish
Pages (from-to)3079-3083
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number4 B
Publication statusPublished - 2006 Apr 25


  • Accumulation mode
  • Channel body doping concentration
  • Channel thickness
  • Inversion mode
  • Short-channel effects
  • Subthreshold slope
  • Threshold voltage
  • Vertical DG-MOSFET


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