The GaAs surface with the native oxide formed by wet etching has been gradually deoxidized via evaporation of a silicon overlayer. Both chemical and electronic properties of such structures have been examined by x-ray photoelectron spectroscopy (XPS) and "XPS under biases," respectively. The latter technique enables a direct assessment of the interface state density of insulatorsemiconductor interfaces. We have concluded that gap states incident to the native oxideGaAs interface have annihilated due to replacement of Ga-O bonds by Ga-Si and As-Si bonds.
|Journal||Journal of Applied Physics|
|Publication status||Published - 2005 Apr 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)