Deoxidation of gallium arsenide surface via silicon overlayer: A study on the evolution of the interface state density

J. Ivanco; T. Kubota; H. Kobayashi

doi:10.1063/1.1873037

Deoxidation of gallium arsenide surface via silicon overlayer: A study on the evolution of the interface state density

J. Ivanco, T. Kubota, H. Kobayashi

Innovative Energy Research Center

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The GaAs surface with the native oxide formed by wet etching has been gradually deoxidized via evaporation of a silicon overlayer. Both chemical and electronic properties of such structures have been examined by x-ray photoelectron spectroscopy (XPS) and "XPS under biases," respectively. The latter technique enables a direct assessment of the interface state density of insulatorsemiconductor interfaces. We have concluded that gap states incident to the native oxideGaAs interface have annihilated due to replacement of Ga-O bonds by Ga-Si and As-Si bonds.

Original language	English
Article number	073712
Journal	Journal of Applied Physics
Volume	97
Issue number	7
DOIs	https://doi.org/10.1063/1.1873037
Publication status	Published - 2005 Apr 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1873037

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title = "Deoxidation of gallium arsenide surface via silicon overlayer: A study on the evolution of the interface state density",

abstract = "The GaAs surface with the native oxide formed by wet etching has been gradually deoxidized via evaporation of a silicon overlayer. Both chemical and electronic properties of such structures have been examined by x-ray photoelectron spectroscopy (XPS) and {"}XPS under biases,{"} respectively. The latter technique enables a direct assessment of the interface state density of insulatorsemiconductor interfaces. We have concluded that gap states incident to the native oxideGaAs interface have annihilated due to replacement of Ga-O bonds by Ga-Si and As-Si bonds.",

author = "J. Ivanco and T. Kubota and H. Kobayashi",

note = "Funding Information: One of us (J.I.) acknowledges a fellowship granted by the Japan Society for the Promotion of Science. The work was performed at the Institute of Scientific and Industrial Research, Osaka University with the partial support of (Slovak) VEGA grant agency, Project No. 2∕5081∕98. The help of H. Fukidome, A. Asano, T. Yuasa, and S. Berkebile is also gratefully acknowledged.",

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AU - Kubota, T.

AU - Kobayashi, H.

N1 - Funding Information: One of us (J.I.) acknowledges a fellowship granted by the Japan Society for the Promotion of Science. The work was performed at the Institute of Scientific and Industrial Research, Osaka University with the partial support of (Slovak) VEGA grant agency, Project No. 2∕5081∕98. The help of H. Fukidome, A. Asano, T. Yuasa, and S. Berkebile is also gratefully acknowledged.

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N2 - The GaAs surface with the native oxide formed by wet etching has been gradually deoxidized via evaporation of a silicon overlayer. Both chemical and electronic properties of such structures have been examined by x-ray photoelectron spectroscopy (XPS) and "XPS under biases," respectively. The latter technique enables a direct assessment of the interface state density of insulatorsemiconductor interfaces. We have concluded that gap states incident to the native oxideGaAs interface have annihilated due to replacement of Ga-O bonds by Ga-Si and As-Si bonds.

AB - The GaAs surface with the native oxide formed by wet etching has been gradually deoxidized via evaporation of a silicon overlayer. Both chemical and electronic properties of such structures have been examined by x-ray photoelectron spectroscopy (XPS) and "XPS under biases," respectively. The latter technique enables a direct assessment of the interface state density of insulatorsemiconductor interfaces. We have concluded that gap states incident to the native oxideGaAs interface have annihilated due to replacement of Ga-O bonds by Ga-Si and As-Si bonds.

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Deoxidation of gallium arsenide surface via silicon overlayer: A study on the evolution of the interface state density

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