Deoxidization of Cu oxide under extremely low oxygen pressure ambient

Kazuhiko Endo, Naoki Shirakawa, Yoshiyuki Yoshida, Shin Ichi Ikeda, Tetsuya Mlno, Eishi Gofuku, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Cu oxide has been deoxidized in an extremely low oxygen partial pressure atmosphere. The oxygen was evacuated to 10-28 atm using a newly developed oxygen reduction system (ORS). It was experimentally demonstrated that the surface oxide of Cu film was completely removed by exposure to such an environment at 200°C. The proposed deoxidization reaction can be used as a new Cu surface cleaning technique.

Original languageEnglish
Pages (from-to)L393-L395
JournalJapanese Journal of Applied Physics
Issue number12-16
Publication statusPublished - 2006


  • Cleaning
  • Cu oxide
  • Deoxidization
  • Extremely low oxygen partial pressure
  • Solid electrolyte
  • Zirconia


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