Dependence of Electron Cyclotron Resonance Plasma Characteristics on Introduced Microwave Conditions

This study reveals the strong dependence of electron cyclotron resonance (ECR) plasma generation on the microwave conditions in the ECR plasma. When the introduced microwave frequency oscillates and has a large ripple, the ECR plasma around the ECR position vibrates. As a result, the half-value width of ion energy distributions around the ECR position is extended. Therefore, the microwave conditions cause plasma instability and disturb the ion flight paths to the substrate. The etching characteristics thus are degraded because of the low anisotropy and the deposition. In order to establish a stable discharge around the ECR position, the oscillation and ripple of this introduced microwave frequency must be accurately controlled.