Dependence of SiO                         2                         /Si interface structure on low-temperature oxidation process

T. Hattori; K. Azuma; Y. Nakata; M. Shioji; T. Shiraishi; T. Yoshida; K. Takahashi; H. Nohira; Y. Takata; S. Shin; K. Kobayashi

doi:10.1016/j.apsusc.2004.05.044

Dependence of SiO ₂ /Si interface structure on low-temperature oxidation process

T. Hattori, K. Azuma, Y. Nakata, M. Shioji, T. Shiraishi, T. Yoshida, K. Takahashi, H. Nohira, Y. Takata, S. Shin, K. Kobayashi

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

By using the SPring-8 beam line, we have studied the dependence of the chemical structure and uniformity of three kinds of approximately 1nm-thick silicon oxide films formed by using atomic oxygen at 300°C on the oxidation process. Among the SiO ₂ Si interfaces formed by several oxidation methods using atomic oxygen, the uniformity was strongly dependent on the oxidation process and the highest uniformity was obtained with the krypton-mixed oxygen plasma oxidation, while the abruptness of the compositional transition layer was weakly dependent on the oxidation process.

Original language	English
Pages (from-to)	197-201
Number of pages	5
Journal	Applied Surface Science
Volume	234
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2004.05.044
Publication status	Published - 2004 Jul 15
Externally published	Yes
Event	The Ninth International Conference on the Formation of Semicon - Madrid, Spain Duration: 2003 Sept 15 → 2003 Sept 19

Keywords

Electronic structure
Interface structure
Oxidation process
Photoelectron spectra
Uniformity

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2004.05.044

Cite this

Hattori, T., Azuma, K., Nakata, Y., Shioji, M., Shiraishi, T., Yoshida, T., Takahashi, K., Nohira, H., Takata, Y., Shin, S., & Kobayashi, K. (2004). Dependence of SiO ₂ /Si interface structure on low-temperature oxidation process Applied Surface Science, 234(1-4), 197-201. https://doi.org/10.1016/j.apsusc.2004.05.044

Dependence of SiO ₂ /Si interface structure on low-temperature oxidation process . / Hattori, T.; Azuma, K.; Nakata, Y. et al.
In: Applied Surface Science, Vol. 234, No. 1-4, 15.07.2004, p. 197-201.

Research output: Contribution to journal › Conference article › peer-review

Hattori, T, Azuma, K, Nakata, Y, Shioji, M, Shiraishi, T, Yoshida, T, Takahashi, K, Nohira, H, Takata, Y, Shin, S & Kobayashi, K 2004, ' Dependence of SiO ₂ /Si interface structure on low-temperature oxidation process ', Applied Surface Science, vol. 234, no. 1-4, pp. 197-201. https://doi.org/10.1016/j.apsusc.2004.05.044

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abstract = " By using the SPring-8 beam line, we have studied the dependence of the chemical structure and uniformity of three kinds of approximately 1nm-thick silicon oxide films formed by using atomic oxygen at 300°C on the oxidation process. Among the SiO 2 Si interfaces formed by several oxidation methods using atomic oxygen, the uniformity was strongly dependent on the oxidation process and the highest uniformity was obtained with the krypton-mixed oxygen plasma oxidation, while the abruptness of the compositional transition layer was weakly dependent on the oxidation process.",

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author = "T. Hattori and K. Azuma and Y. Nakata and M. Shioji and T. Shiraishi and T. Yoshida and K. Takahashi and H. Nohira and Y. Takata and S. Shin and K. Kobayashi",

note = "Funding Information: The authors express sincere thanks to M. Katayama from Shinetsu Handoutai Ltd. for supplying epitaxially grown silicon wafers used in the present study. The synchrotron radiation experiments were performed at SPring-8 with the approval of Japan Synchrotron Radiation Research Institute as a Nanotechnology Support Project of the Ministry of Education, Culture, Sports, Science and Technology. This work was partially supported by the Ministry of Education, Science, Sports and Culture through a Grant-in-Aid for Scientific Research on Priority Areas (A) (No. 13025243), and partially by the Ministry of Economy, Trade and Industry and the New Energy and Industrial Technology Development.; The Ninth International Conference on the Formation of Semicon ; Conference date: 15-09-2003 Through 19-09-2003",

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T1 - Dependence of SiO 2 /Si interface structure on low-temperature oxidation process

AU - Hattori, T.

AU - Azuma, K.

AU - Nakata, Y.

AU - Shioji, M.

AU - Shiraishi, T.

AU - Yoshida, T.

AU - Takahashi, K.

AU - Nohira, H.

AU - Takata, Y.

AU - Shin, S.

AU - Kobayashi, K.

N1 - Funding Information: The authors express sincere thanks to M. Katayama from Shinetsu Handoutai Ltd. for supplying epitaxially grown silicon wafers used in the present study. The synchrotron radiation experiments were performed at SPring-8 with the approval of Japan Synchrotron Radiation Research Institute as a Nanotechnology Support Project of the Ministry of Education, Culture, Sports, Science and Technology. This work was partially supported by the Ministry of Education, Science, Sports and Culture through a Grant-in-Aid for Scientific Research on Priority Areas (A) (No. 13025243), and partially by the Ministry of Economy, Trade and Industry and the New Energy and Industrial Technology Development.

PY - 2004/7/15

Y1 - 2004/7/15

N2 - By using the SPring-8 beam line, we have studied the dependence of the chemical structure and uniformity of three kinds of approximately 1nm-thick silicon oxide films formed by using atomic oxygen at 300°C on the oxidation process. Among the SiO 2 Si interfaces formed by several oxidation methods using atomic oxygen, the uniformity was strongly dependent on the oxidation process and the highest uniformity was obtained with the krypton-mixed oxygen plasma oxidation, while the abruptness of the compositional transition layer was weakly dependent on the oxidation process.

AB - By using the SPring-8 beam line, we have studied the dependence of the chemical structure and uniformity of three kinds of approximately 1nm-thick silicon oxide films formed by using atomic oxygen at 300°C on the oxidation process. Among the SiO 2 Si interfaces formed by several oxidation methods using atomic oxygen, the uniformity was strongly dependent on the oxidation process and the highest uniformity was obtained with the krypton-mixed oxygen plasma oxidation, while the abruptness of the compositional transition layer was weakly dependent on the oxidation process.

KW - Electronic structure

KW - Interface structure

KW - Oxidation process

KW - Photoelectron spectra

KW - Uniformity

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