Dependence of SiO 2 /Si interface structure on low-temperature oxidation process

T. Hattori, K. Azuma, Y. Nakata, M. Shioji, T. Shiraishi, T. Yoshida, K. Takahashi, H. Nohira, Y. Takata, S. Shin, K. Kobayashi

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


By using the SPring-8 beam line, we have studied the dependence of the chemical structure and uniformity of three kinds of approximately 1nm-thick silicon oxide films formed by using atomic oxygen at 300°C on the oxidation process. Among the SiO 2 Si interfaces formed by several oxidation methods using atomic oxygen, the uniformity was strongly dependent on the oxidation process and the highest uniformity was obtained with the krypton-mixed oxygen plasma oxidation, while the abruptness of the compositional transition layer was weakly dependent on the oxidation process.

Original languageEnglish
Pages (from-to)197-201
Number of pages5
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2004 Jul 15
Externally publishedYes
EventThe Ninth International Conference on the Formation of Semicon - Madrid, Spain
Duration: 2003 Sept 152003 Sept 19


  • Electronic structure
  • Interface structure
  • Oxidation process
  • Photoelectron spectra
  • Uniformity

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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