TY - GEN
T1 - Dependence of thermal decomposition of metal organic gases on metal surface for gas distribution system
AU - Yamashita, S.
AU - Watanuki, K.
AU - Ishii, H.
AU - Shiba, Y.
AU - Kitano, M.
AU - Shirai, Y.
AU - Sugawa, S.
AU - Ohmi, T.
PY - 2010
Y1 - 2010
N2 - The performance of semiconductor films is influenced by the purity of the metal-organic (MO) gas that is used, so it is important to investigate the decomposition behavior of MO gases. The decomposition of dimethylzinc, trimethylgallium and trimethylaluminum is found to depend on the metal surface in the reactor tube. A reactor tube with an Al2O3 surface exhibits the highest temperature as which decomposition of the MO gases started, and the highest activation energy. These results indicate that the Al 2O3 surface has the lowest catalytic activity for the decomposition of these MO gases. However, decomposition of dimethylzinc occurs at room temperature when it is trapped in a reactor tube. This decomposition ceases past a certain trapped time, so the catalytic activity for the decomposition of MO gases by surfaces stabilizes. Therefore, Al 2O3 surfaces are useful for application in MO gas distribution systems.
AB - The performance of semiconductor films is influenced by the purity of the metal-organic (MO) gas that is used, so it is important to investigate the decomposition behavior of MO gases. The decomposition of dimethylzinc, trimethylgallium and trimethylaluminum is found to depend on the metal surface in the reactor tube. A reactor tube with an Al2O3 surface exhibits the highest temperature as which decomposition of the MO gases started, and the highest activation energy. These results indicate that the Al 2O3 surface has the lowest catalytic activity for the decomposition of these MO gases. However, decomposition of dimethylzinc occurs at room temperature when it is trapped in a reactor tube. This decomposition ceases past a certain trapped time, so the catalytic activity for the decomposition of MO gases by surfaces stabilizes. Therefore, Al 2O3 surfaces are useful for application in MO gas distribution systems.
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U2 - 10.1149/1.3485612
DO - 10.1149/1.3485612
M3 - Conference contribution
AN - SCOPUS:84857413250
SN - 9781607681823
T3 - ECS Transactions
SP - 121
EP - 128
BT - State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
PB - Electrochemical Society Inc.
T2 - State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 218th ECS Meeting
Y2 - 10 October 2010 through 15 October 2010
ER -