Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions

Shoji Ikeda; Jun Hayakawa; Young Min Lee; Fumihiro Matsukura; Hideo Ohno

doi:10.1016/j.jmmm.2006.10.770

Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions

Shoji Ikeda, Jun Hayakawa, Young Min Lee, Fumihiro Matsukura, Hideo Ohno

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We investigated the relationship between the tunnel magnetoresistance (TMR) ratio and the electrode structure in MgO-barrier magnetic tunnel junctions (MTJs). The TMR ratio in an MTJ with Co₄₀Fe₄₀B₂₀ reference and free layers reached 355% at the post-deposition annealing temperature of T_a=400 °C. When Co₅₀Fe₅₀ or Co₉₀Fe₁₀ is used for the reference layer material, no high TMR ratio was observed. The key to have high TMR ratio is to have highly oriented (0 0 1) MgO barrier/CoFeB crystalline electrodes. The highest TMR ratio obtained so far is 450% at T_a=450 °C in a pseudo-spin-valve MTJ.

Original language	English
Pages (from-to)	1937-1939
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.770
Publication status	Published - 2007 Mar

Keywords

CoFeB
MgO barrier
Tunnel magnetoresistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2006.10.770

Cite this

@article{955b5a76e1d44228ac34d9ba69c0c25f,

title = "Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions",

abstract = "We investigated the relationship between the tunnel magnetoresistance (TMR) ratio and the electrode structure in MgO-barrier magnetic tunnel junctions (MTJs). The TMR ratio in an MTJ with Co40Fe40B20 reference and free layers reached 355% at the post-deposition annealing temperature of Ta=400 °C. When Co50Fe50 or Co90Fe10 is used for the reference layer material, no high TMR ratio was observed. The key to have high TMR ratio is to have highly oriented (0 0 1) MgO barrier/CoFeB crystalline electrodes. The highest TMR ratio obtained so far is 450% at Ta=450 °C in a pseudo-spin-valve MTJ.",

keywords = "CoFeB, MgO barrier, Tunnel magnetoresistance",

author = "Shoji Ikeda and Jun Hayakawa and Lee, {Young Min} and Fumihiro Matsukura and Hideo Ohno",

note = "Funding Information: This work was supported by the IT program of Research Revolution 2002 (RR2002): “Development of Universal Low-power Spin Memory” from the Ministry of Education, Culture, Sports, Science, and Technology of Japan.",

year = "2007",

month = mar,

doi = "10.1016/j.jmmm.2006.10.770",

language = "English",

volume = "310",

pages = "1937--1939",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "2 SUPPL. PART 3",

}

TY - JOUR

T1 - Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions

AU - Ikeda, Shoji

AU - Hayakawa, Jun

AU - Lee, Young Min

AU - Matsukura, Fumihiro

AU - Ohno, Hideo

N1 - Funding Information: This work was supported by the IT program of Research Revolution 2002 (RR2002): “Development of Universal Low-power Spin Memory” from the Ministry of Education, Culture, Sports, Science, and Technology of Japan.

PY - 2007/3

Y1 - 2007/3

N2 - We investigated the relationship between the tunnel magnetoresistance (TMR) ratio and the electrode structure in MgO-barrier magnetic tunnel junctions (MTJs). The TMR ratio in an MTJ with Co40Fe40B20 reference and free layers reached 355% at the post-deposition annealing temperature of Ta=400 °C. When Co50Fe50 or Co90Fe10 is used for the reference layer material, no high TMR ratio was observed. The key to have high TMR ratio is to have highly oriented (0 0 1) MgO barrier/CoFeB crystalline electrodes. The highest TMR ratio obtained so far is 450% at Ta=450 °C in a pseudo-spin-valve MTJ.

AB - We investigated the relationship between the tunnel magnetoresistance (TMR) ratio and the electrode structure in MgO-barrier magnetic tunnel junctions (MTJs). The TMR ratio in an MTJ with Co40Fe40B20 reference and free layers reached 355% at the post-deposition annealing temperature of Ta=400 °C. When Co50Fe50 or Co90Fe10 is used for the reference layer material, no high TMR ratio was observed. The key to have high TMR ratio is to have highly oriented (0 0 1) MgO barrier/CoFeB crystalline electrodes. The highest TMR ratio obtained so far is 450% at Ta=450 °C in a pseudo-spin-valve MTJ.

KW - CoFeB

KW - MgO barrier

KW - Tunnel magnetoresistance

UR - http://www.scopus.com/inward/record.url?scp=33847627886&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847627886&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2006.10.770

DO - 10.1016/j.jmmm.2006.10.770

M3 - Article

AN - SCOPUS:33847627886

SN - 0304-8853

VL - 310

SP - 1937

EP - 1939

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SUPPL. PART 3

ER -

Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this