TY - GEN
T1 - Deposition of multilayered titanium thin film by Nd:YAG laser ablation
AU - Nakamura, T.
AU - Takahashi, H.
AU - Yamamoto, K.
AU - Sato, N.
AU - Muramatsu, A.
AU - Matsubara, E.
PY - 2003
Y1 - 2003
N2 - TiO2 and Ti/TiO2 thin films were deposited on a quartz substrate by laser ablation of TiO2 and Ti targets using Nd:YAG pulsed laser. After sulfurization of the TiO2 film in H2S or CS2 gas at 1273 K for 1 hour, the surface atomic structure was changed. Furthermore, the Ti/TiO2 film was successfully prepared by the subsequent ablation of Ti and TiO2 targets. The morphology and structure of the films were characterized by XRD, XPS and AFM analyses.
AB - TiO2 and Ti/TiO2 thin films were deposited on a quartz substrate by laser ablation of TiO2 and Ti targets using Nd:YAG pulsed laser. After sulfurization of the TiO2 film in H2S or CS2 gas at 1273 K for 1 hour, the surface atomic structure was changed. Furthermore, the Ti/TiO2 film was successfully prepared by the subsequent ablation of Ti and TiO2 targets. The morphology and structure of the films were characterized by XRD, XPS and AFM analyses.
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M3 - Conference contribution
AN - SCOPUS:0141459649
SN - 0873395468
T3 - Yazawa International Symposium: Metallurgical and Materials Processing: Principles and Techologies; Materials Processing Fundamentals and New Technologies
SP - 1241
EP - 1246
BT - Yazawa International Symposium
A2 - Kongoli, F.
A2 - Itagaki, K.
A2 - Yamauchi, C.
A2 - Sohn, H.Y.
A2 - Kongoli, F.
A2 - Itagaki, K.
A2 - Yamauchi, C.
A2 - Sohn, H.Y.
T2 - Yazawa International Symposium: Metallurgical and Materials Processing: Principles and Technologies; Materials Processing Fundamentals and New Technologies
Y2 - 2 March 2003 through 6 March 2003
ER -