Deposition of WSix films from preactivated mixture of WF6/SiH4

Takeyasu Saito, Yukihiro Shimogaki, Yasuyuki Egashira, Hiroshi Komiyama, Yoshiaki Yuyama, Katsuro Sugawara, Katsumi Takahiro, Shinji Nagata, Sadae Yamaguchi

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


WSix films were formed on a substrate from thermal chemical vapor deposition (CVD) of WF6 and SiH4. Chemical reactions were initiated upstream of the substrate by a preheater, and chemical reactions are radical chain reactions which produce preactivated cursors that are deposited, causing film growth. Because chemical reactions occur upstream of the substrate, film formation occurred even at temperatures as low as 40° C. Compared with films deposited at the same substrate temperature, without preheating, the Si content increased by 50%, the interfacial concentration of residual fluorine decreased by one order of magnitude, and the sticking probability of the precursors on the substrate was the same. The sticking probability was shown to depend solely on the substrate temperature, even for varying degrees of preheating. Deposition on a low-temperature substrate of the preactivated precursors provides a means to deposit conformal WSix films with low interfacial concentration of fluorine.

Original languageEnglish
Pages (from-to)275
Number of pages1
JournalJapanese journal of applied physics
Issue number1R
Publication statusPublished - 1994 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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