Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures

Y. Shimizu; Y. Kawamura; M. Uematsu; M. Tomita; T. Kinno; N. Okada; M. Kato; H. Uchida; M. Takahashi; H. Ito; H. Ishikawa; Y. Ohji; H. Takamizawa; Y. Nagai; K. M. Itoh

doi:10.1063/1.3544496

Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures

Y. Shimizu, Y. Kawamura, M. Uematsu, M. Tomita, T. Kinno, N. Okada, M. Kato, H. Uchida, M. Takahashi, H. Ito, H. Ishikawa, Y. Ohji, H. Takamizawa, Y. Nagai, K. M. Itoh

Materials Design Division

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36 Citations (Scopus)

Abstract

We report on a direct comparison of the depth and lateral resolution of the current state-of-the-art laser-assisted atom probe microscopy analysis of single-crystalline silicon. The isotopic heterostructures composed of 5-15 nm-thick ²⁸Si- and ³⁰Si-enriched layers were measured to reconstruct three-dimensional images of ²⁸Si and ³⁰Si stable isotope distributions in the surface perpendicular and parallel directions for the analysis of the depth and lateral resolution, respectively. The decay length experimentally obtained for the lateral direction is only about twice longer than in the direction, meaning that the lateral resolution is higher than obtained by secondary ion mass spectrometry.

Original language	English
Article number	036102
Journal	Journal of Applied Physics
Volume	109
Issue number	3
DOIs	https://doi.org/10.1063/1.3544496
Publication status	Published - 2011 Feb 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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Shimizu, Y., Kawamura, Y., Uematsu, M., Tomita, M., Kinno, T., Okada, N., Kato, M., Uchida, H., Takahashi, M., Ito, H., Ishikawa, H., Ohji, Y., Takamizawa, H., Nagai, Y., & Itoh, K. M. (2011). Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures. Journal of Applied Physics, 109(3), [036102]. https://doi.org/10.1063/1.3544496

Shimizu, Y, Kawamura, Y, Uematsu, M, Tomita, M, Kinno, T, Okada, N, Kato, M, Uchida, H, Takahashi, M, Ito, H, Ishikawa, H, Ohji, Y, Takamizawa, H, Nagai, Y & Itoh, KM 2011, 'Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures', Journal of Applied Physics, vol. 109, no. 3, 036102. https://doi.org/10.1063/1.3544496

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title = "Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures",

abstract = "We report on a direct comparison of the depth and lateral resolution of the current state-of-the-art laser-assisted atom probe microscopy analysis of single-crystalline silicon. The isotopic heterostructures composed of 5-15 nm-thick 28Si- and 30Si-enriched layers were measured to reconstruct three-dimensional images of 28Si and 30Si stable isotope distributions in the surface perpendicular and parallel directions for the analysis of the depth and lateral resolution, respectively. The decay length experimentally obtained for the lateral direction is only about twice longer than in the direction, meaning that the lateral resolution is higher than obtained by secondary ion mass spectrometry.",

author = "Y. Shimizu and Y. Kawamura and M. Uematsu and M. Tomita and T. Kinno and N. Okada and M. Kato and H. Uchida and M. Takahashi and H. Ito and H. Ishikawa and Y. Ohji and H. Takamizawa and Y. Nagai and Itoh, {K. M.}",

note = "Funding Information: This work was supported in part by Grant-in-Aid for Scientific Research by MEXT, in part by Special Coordination Funds for Promoting Science and Technology, in part by FIRST, and in part by a Grant-in-Aid for the Global Center of Excellence at Keio University.",

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AU - Shimizu, Y.

AU - Kawamura, Y.

AU - Uematsu, M.

AU - Tomita, M.

AU - Kinno, T.

AU - Okada, N.

AU - Kato, M.

AU - Uchida, H.

AU - Takahashi, M.

AU - Ito, H.

AU - Ishikawa, H.

AU - Ohji, Y.

AU - Takamizawa, H.

AU - Nagai, Y.

AU - Itoh, K. M.

N1 - Funding Information: This work was supported in part by Grant-in-Aid for Scientific Research by MEXT, in part by Special Coordination Funds for Promoting Science and Technology, in part by FIRST, and in part by a Grant-in-Aid for the Global Center of Excellence at Keio University.

PY - 2011/2/1

Y1 - 2011/2/1

N2 - We report on a direct comparison of the depth and lateral resolution of the current state-of-the-art laser-assisted atom probe microscopy analysis of single-crystalline silicon. The isotopic heterostructures composed of 5-15 nm-thick 28Si- and 30Si-enriched layers were measured to reconstruct three-dimensional images of 28Si and 30Si stable isotope distributions in the surface perpendicular and parallel directions for the analysis of the depth and lateral resolution, respectively. The decay length experimentally obtained for the lateral direction is only about twice longer than in the direction, meaning that the lateral resolution is higher than obtained by secondary ion mass spectrometry.

AB - We report on a direct comparison of the depth and lateral resolution of the current state-of-the-art laser-assisted atom probe microscopy analysis of single-crystalline silicon. The isotopic heterostructures composed of 5-15 nm-thick 28Si- and 30Si-enriched layers were measured to reconstruct three-dimensional images of 28Si and 30Si stable isotope distributions in the surface perpendicular and parallel directions for the analysis of the depth and lateral resolution, respectively. The decay length experimentally obtained for the lateral direction is only about twice longer than in the direction, meaning that the lateral resolution is higher than obtained by secondary ion mass spectrometry.

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Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures

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