Depth profiling of deuterium implanted in thin films by the elastic recoil detection technique of transmission geometry

The elastic recoil detection technique of transmission geometry using ⁴He ion beams has been developed to measure the whole profile of hydrogen isotopes in thin films. As an application of this technique, the retention behavior of D atoms under D implantation has been observed in situ on Ti and Al films. On the Ti films, a flat distribution of D was observed at the beginning of the implantation. At higher implantation fluences, however, the surface segregation of D was clearly recognized. On the Al films we examined the re-emission and permeation behavior of the implanted D atoms at various temperatures.