The Si-SiO//2 interface structures of thermally grown oxide films on (100) surfaces were studied using three types of depth profiling measurement. Analysis of these measurements confirms the interface structures determined previously by nondestructive depth profiling. The applicability of chemical depth profiling to the study of interface structures was also studied. A new method of spectral analysis, used successfully in the present measurements, is presented.
|Title of host publication||Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes|
|Number of pages||8|
|Publication status||Published - 1986 Apr|
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