DEPTH PROFILING OF Si-SiO//2 INTERFACE STRUCTURES.

Toshihisa Suzuki; Masaaki Muto; Motohiro Hara; Kikuo Yamabe; Takeo Hattori

DEPTH PROFILING OF Si-SiO//2 INTERFACE STRUCTURES.

Toshihisa Suzuki, Masaaki Muto, Motohiro Hara, Kikuo Yamabe, Takeo Hattori

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

The Si-SiO//2 interface structures of thermally grown oxide films on (100) surfaces were studied using three types of depth profiling measurement. Analysis of these measurements confirms the interface structures determined previously by nondestructive depth profiling. The applicability of chemical depth profiling to the study of interface structures was also studied. A new method of spectral analysis, used successfully in the present measurements, is presented.

Original language	English
Title of host publication	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Pages	544-551
Number of pages	8
Volume	25
Edition	4
Publication status	Published - 1986 Apr

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "DEPTH PROFILING OF Si-SiO//2 INTERFACE STRUCTURES.",

abstract = "The Si-SiO//2 interface structures of thermally grown oxide films on (100) surfaces were studied using three types of depth profiling measurement. Analysis of these measurements confirms the interface structures determined previously by nondestructive depth profiling. The applicability of chemical depth profiling to the study of interface structures was also studied. A new method of spectral analysis, used successfully in the present measurements, is presented.",

author = "Toshihisa Suzuki and Masaaki Muto and Motohiro Hara and Kikuo Yamabe and Takeo Hattori",

year = "1986",

month = apr,

language = "English",

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pages = "544--551",

booktitle = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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T1 - DEPTH PROFILING OF Si-SiO//2 INTERFACE STRUCTURES.

AU - Suzuki, Toshihisa

AU - Muto, Masaaki

AU - Hara, Motohiro

AU - Yamabe, Kikuo

AU - Hattori, Takeo

PY - 1986/4

Y1 - 1986/4

N2 - The Si-SiO//2 interface structures of thermally grown oxide films on (100) surfaces were studied using three types of depth profiling measurement. Analysis of these measurements confirms the interface structures determined previously by nondestructive depth profiling. The applicability of chemical depth profiling to the study of interface structures was also studied. A new method of spectral analysis, used successfully in the present measurements, is presented.

AB - The Si-SiO//2 interface structures of thermally grown oxide films on (100) surfaces were studied using three types of depth profiling measurement. Analysis of these measurements confirms the interface structures determined previously by nondestructive depth profiling. The applicability of chemical depth profiling to the study of interface structures was also studied. A new method of spectral analysis, used successfully in the present measurements, is presented.

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M3 - Chapter

AN - SCOPUS:0022702982

VL - 25

SP - 544

EP - 551

BT - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

ER -

DEPTH PROFILING OF Si-SiO//2 INTERFACE STRUCTURES.

Abstract

ASJC Scopus subject areas

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