TY - JOUR
T1 - Design and fabrication of a large area freestanding compressive stress SiO2 optical window
AU - Van Toan, Nguyen
AU - Sangu, Suguru
AU - Ono, Takahito
N1 - Publisher Copyright:
© 2016 IOP Publishing Ltd.
PY - 2016/6/21
Y1 - 2016/6/21
N2 - This paper reports the design and fabrication of a 7.2 mm × 9.6 mm freestanding compressive stress SiO2 optical window without buckling. An application of the SiO2 optical window with and without liquid penetration has been demonstrated for an optical modulator and its optical characteristic is evaluated by using an image sensor. Two methods for SiO2 optical window fabrication have been presented. The first method is a combination of silicon etching and a thermal oxidation process. Silicon capillaries fabricated by deep reactive ion etching (deep RIE) are completely oxidized to form the SiO2 capillaries. The large compressive stress of the oxide causes buckling of the optical window, which is reduced by optimizing the design of the device structure. A magnetron-type RIE, which is investigated for deep SiO2 etching, is the second method. This method achieves deep SiO2 etching together with smooth surfaces, vertical shapes and a high aspect ratio. Additionally, in order to avoid a wrinkling optical window, the idea of a Peano curve structure has been proposed to achieve a freestanding compressive stress SiO2 optical window. A 7.2 mm × 9.6 mm optical window area without buckling integrated with an image sensor for an optical modulator has been successfully fabricated. The qualitative and quantitative evaluations have been performed in cases with and without liquid penetration.
AB - This paper reports the design and fabrication of a 7.2 mm × 9.6 mm freestanding compressive stress SiO2 optical window without buckling. An application of the SiO2 optical window with and without liquid penetration has been demonstrated for an optical modulator and its optical characteristic is evaluated by using an image sensor. Two methods for SiO2 optical window fabrication have been presented. The first method is a combination of silicon etching and a thermal oxidation process. Silicon capillaries fabricated by deep reactive ion etching (deep RIE) are completely oxidized to form the SiO2 capillaries. The large compressive stress of the oxide causes buckling of the optical window, which is reduced by optimizing the design of the device structure. A magnetron-type RIE, which is investigated for deep SiO2 etching, is the second method. This method achieves deep SiO2 etching together with smooth surfaces, vertical shapes and a high aspect ratio. Additionally, in order to avoid a wrinkling optical window, the idea of a Peano curve structure has been proposed to achieve a freestanding compressive stress SiO2 optical window. A 7.2 mm × 9.6 mm optical window area without buckling integrated with an image sensor for an optical modulator has been successfully fabricated. The qualitative and quantitative evaluations have been performed in cases with and without liquid penetration.
KW - image sensor
KW - light transmittance
KW - reactive ion etching process
KW - SiO optical window
KW - thermal oxidation process
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U2 - 10.1088/0960-1317/26/7/075016
DO - 10.1088/0960-1317/26/7/075016
M3 - Article
AN - SCOPUS:84979503585
SN - 0960-1317
VL - 26
JO - Journal of Micromechanics and Microengineering
JF - Journal of Micromechanics and Microengineering
IS - 7
M1 - 075016
ER -