Design and fabrication of a miniaturized three-degree-of-freedom piezoresistive acceleration sensor based on MEMS technology using deep reactive ion etching

Vu Ngoc Hung; Nguyen Van Minh; Le Van Minh; Nguyen Huu Hung; Chu Manh Hoang; Dzung Viet Dao; Ranjith Amarasinghe; Bui Thanh Tung; Susumu Sugiyama

doi:10.1007/978-3-540-88201-5_44

Design and fabrication of a miniaturized three-degree-of-freedom piezoresistive acceleration sensor based on MEMS technology using deep reactive ion etching

Vu Ngoc Hung, Nguyen Van Minh, Le Van Minh, Nguyen Huu Hung, Chu Manh Hoang, Dzung Viet Dao, Ranjith Amarasinghe, Bui Thanh Tung, Susumu Sugiyama

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

This paper presents the design and the fabrication of a miniaturized three-degree-of-freedom piezoresistive acceleration sensor based on MEMS technology using deep reactive ion etching. Finite element method (FEM) using the ANSYS program has been applied to study the mechanical and electrical behavior of the device. The fabricated sensor with the dimension 1 × 1 × 0.45 mm³ can detect simultaneously three components of the linear acceleration at the frequency bandwidth 100 Hz.

Original language	English
Title of host publication	Physics and Engineering of New Materials
Editors	H.C.Klaus Wandelt, Do Tran Cat, Annemarie Pucci
Publisher	Springer Science and Business Media, LLC
Pages	377-383
Number of pages	7
ISBN (Print)	9783540882008
DOIs	https://doi.org/10.1007/978-3-540-88201-5_44
Publication status	Published - 2009
Event	10th German-Vietnamese Seminar on Physics and Engineering, GVS 2007 - Bonn, Germany Duration: 2007 Jun 6 → 2007 Jun 9

Publication series

Name	Springer Proceedings in Physics
Volume	127
ISSN (Print)	0930-8989
ISSN (Electronic)	1867-4941

Conference

Conference	10th German-Vietnamese Seminar on Physics and Engineering, GVS 2007
Country/Territory	Germany
City	Bonn
Period	07/6/6 → 07/6/9

Access to Document

10.1007/978-3-540-88201-5_44

Cite this

Hung, V. N., Minh, N. V., Minh, L. V., Hung, N. H., Hoang, C. M., Dao, D. V., Amarasinghe, R., Tung, B. T., & Sugiyama, S. (2009). Design and fabrication of a miniaturized three-degree-of-freedom piezoresistive acceleration sensor based on MEMS technology using deep reactive ion etching. In H. C. K. Wandelt, D. T. Cat, & A. Pucci (Eds.), Physics and Engineering of New Materials (pp. 377-383). (Springer Proceedings in Physics; Vol. 127). Springer Science and Business Media, LLC. https://doi.org/10.1007/978-3-540-88201-5_44

Hung, Vu Ngoc ; Minh, Nguyen Van ; Minh, Le Van et al. / Design and fabrication of a miniaturized three-degree-of-freedom piezoresistive acceleration sensor based on MEMS technology using deep reactive ion etching. Physics and Engineering of New Materials. editor / H.C.Klaus Wandelt ; Do Tran Cat ; Annemarie Pucci. Springer Science and Business Media, LLC, 2009. pp. 377-383 (Springer Proceedings in Physics).

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title = "Design and fabrication of a miniaturized three-degree-of-freedom piezoresistive acceleration sensor based on MEMS technology using deep reactive ion etching",

abstract = "This paper presents the design and the fabrication of a miniaturized three-degree-of-freedom piezoresistive acceleration sensor based on MEMS technology using deep reactive ion etching. Finite element method (FEM) using the ANSYS program has been applied to study the mechanical and electrical behavior of the device. The fabricated sensor with the dimension 1 × 1 × 0.45 mm3 can detect simultaneously three components of the linear acceleration at the frequency bandwidth 100 Hz.",

author = "Hung, {Vu Ngoc} and Minh, {Nguyen Van} and Minh, {Le Van} and Hung, {Nguyen Huu} and Hoang, {Chu Manh} and Dao, {Dzung Viet} and Ranjith Amarasinghe and Tung, {Bui Thanh} and Susumu Sugiyama",

note = "Funding Information: This work was supported by the MEMS project funded by NEDO organization, Japan. Publisher Copyright: {\textcopyright} Springer-Verlag Berlin Heidelberg 2009.; 10th German-Vietnamese Seminar on Physics and Engineering, GVS 2007 ; Conference date: 06-06-2007 Through 09-06-2007",

year = "2009",

doi = "10.1007/978-3-540-88201-5_44",

language = "English",

isbn = "9783540882008",

series = "Springer Proceedings in Physics",

publisher = "Springer Science and Business Media, LLC",

pages = "377--383",

editor = "H.C.Klaus Wandelt and Cat, {Do Tran} and Annemarie Pucci",

booktitle = "Physics and Engineering of New Materials",

}

Hung, VN, Minh, NV, Minh, LV, Hung, NH, Hoang, CM, Dao, DV, Amarasinghe, R, Tung, BT & Sugiyama, S 2009, Design and fabrication of a miniaturized three-degree-of-freedom piezoresistive acceleration sensor based on MEMS technology using deep reactive ion etching. in HCK Wandelt, DT Cat & A Pucci (eds), Physics and Engineering of New Materials. Springer Proceedings in Physics, vol. 127, Springer Science and Business Media, LLC, pp. 377-383, 10th German-Vietnamese Seminar on Physics and Engineering, GVS 2007, Bonn, Germany, 07/6/6. https://doi.org/10.1007/978-3-540-88201-5_44

Design and fabrication of a miniaturized three-degree-of-freedom piezoresistive acceleration sensor based on MEMS technology using deep reactive ion etching. / Hung, Vu Ngoc; Minh, Nguyen Van; Minh, Le Van et al.
Physics and Engineering of New Materials. ed. / H.C.Klaus Wandelt; Do Tran Cat; Annemarie Pucci. Springer Science and Business Media, LLC, 2009. p. 377-383 (Springer Proceedings in Physics; Vol. 127).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hung, Vu Ngoc

AU - Minh, Nguyen Van

AU - Minh, Le Van

AU - Hung, Nguyen Huu

AU - Hoang, Chu Manh

AU - Dao, Dzung Viet

AU - Amarasinghe, Ranjith

AU - Tung, Bui Thanh

AU - Sugiyama, Susumu

N1 - Funding Information: This work was supported by the MEMS project funded by NEDO organization, Japan. Publisher Copyright: © Springer-Verlag Berlin Heidelberg 2009.

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N2 - This paper presents the design and the fabrication of a miniaturized three-degree-of-freedom piezoresistive acceleration sensor based on MEMS technology using deep reactive ion etching. Finite element method (FEM) using the ANSYS program has been applied to study the mechanical and electrical behavior of the device. The fabricated sensor with the dimension 1 × 1 × 0.45 mm3 can detect simultaneously three components of the linear acceleration at the frequency bandwidth 100 Hz.

AB - This paper presents the design and the fabrication of a miniaturized three-degree-of-freedom piezoresistive acceleration sensor based on MEMS technology using deep reactive ion etching. Finite element method (FEM) using the ANSYS program has been applied to study the mechanical and electrical behavior of the device. The fabricated sensor with the dimension 1 × 1 × 0.45 mm3 can detect simultaneously three components of the linear acceleration at the frequency bandwidth 100 Hz.

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Hung VN, Minh NV, Minh LV, Hung NH, Hoang CM, Dao DV et al. Design and fabrication of a miniaturized three-degree-of-freedom piezoresistive acceleration sensor based on MEMS technology using deep reactive ion etching. In Wandelt HCK, Cat DT, Pucci A, editors, Physics and Engineering of New Materials. Springer Science and Business Media, LLC. 2009. p. 377-383. (Springer Proceedings in Physics). doi: 10.1007/978-3-540-88201-5_44

Design and fabrication of a miniaturized three-degree-of-freedom piezoresistive acceleration sensor based on MEMS technology using deep reactive ion etching

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