Design and fabrication of a terahertz imaging array in 180-nm CMOS process technology

Kosuke Wakita, Eiichi Sano, Masayuki Ikebe, Stevanus Arnold, Taiichi Otsuji, Yuma Takida, Hiroaki Minamide

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

Using terahertz waves for imaging is gaining increased interest. A CMOS cascode amplifier biased near the threshold voltage of a MOSFET for terahertz direct detection is proposed. A test chip composed of 4×4 pixel CMOS terahertz imaging array is designed and fabricated on the basis of a low-cost 180-nm CMOS process technology. Each pixel consists of a microstrip patch antenna, an impedance-matching circuit, and the direct detector. The imaging pixels achieve a responsivity of 51.9 kV/W at 0.915 THz and noise equivalent power (NEP) of 358 pW/Hz1/2 at modulation frequency of 31 Hz. NEP is estimated to be reduced to 33.5 pW/Hz1/2 at 10 kHz. The imaging pixel occupies 250×180 μm. These results suggest that cost-efficient terahertz imaging is possible in the near future.

Original languageEnglish
Title of host publication2016 21st International Conference on Microwave, Radar and Wireless Communications, MIKON 2016
EditorsArtur Rydosz
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509022144
DOIs
Publication statusPublished - 2016 Jun 14
Event21st International Conference on Microwave, Radar and Wireless Communications, MIKON 2016 - Krakow, Poland
Duration: 2016 May 92016 May 11

Publication series

Name2016 21st International Conference on Microwave, Radar and Wireless Communications, MIKON 2016

Conference

Conference21st International Conference on Microwave, Radar and Wireless Communications, MIKON 2016
Country/TerritoryPoland
CityKrakow
Period16/5/916/5/11

Keywords

  • CMOS
  • Detector
  • Direct detection
  • Envelope detection
  • Imaging
  • Microstrip antenna
  • NEP
  • On-chip patch antenna
  • Responsivity
  • Terahertz
  • THz

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