Design of a 32.7-GHz Bandwidth AGC Amplifier IC with Wide Dynamic Range Implemented in SiGe HBT

Kenichi Ohhata; Tonu Masuda; Eiji Ohue; Katsuyoshi Washio

doi:10.1109/4.782090

Design of a 32.7-GHz Bandwidth AGC Amplifier IC with Wide Dynamic Range Implemented in SiGe HBT

Kenichi Ohhata, Tonu Masuda, Eiji Ohue, Katsuyoshi Washio

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

A wide-bandwidth automatic gain control (AGC) amplifier IC was developed using a self-aligned selective-epitaxial SiGe heterojunction bipolar transistor (HBT). A transimpedance load circuit was used, and its damping factor was optimized to achieve a wide bandwidth of 32.7 GHz. Capacitor peaking was introduced to the second variable-gain amplifier in order to obtain a wide gain dynamic range of 19 dB. The amplifier IC has a noise figure of 18 dB and an eye pattern at 25 Gb/s.

Original language	English
Pages (from-to)	1290-1297
Number of pages	8
Journal	IEEE Journal of Solid-State Circuits
Volume	34
Issue number	9
DOIs	https://doi.org/10.1109/4.782090
Publication status	Published - 1999 Sept
Externally published	Yes

Keywords

Automatic gain control (AGC) amplifier
SiGe heterojunction bipolar transistor (HBT)
optical transmission system

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/4.782090

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title = "Design of a 32.7-GHz Bandwidth AGC Amplifier IC with Wide Dynamic Range Implemented in SiGe HBT",

abstract = "A wide-bandwidth automatic gain control (AGC) amplifier IC was developed using a self-aligned selective-epitaxial SiGe heterojunction bipolar transistor (HBT). A transimpedance load circuit was used, and its damping factor was optimized to achieve a wide bandwidth of 32.7 GHz. Capacitor peaking was introduced to the second variable-gain amplifier in order to obtain a wide gain dynamic range of 19 dB. The amplifier IC has a noise figure of 18 dB and an eye pattern at 25 Gb/s.",

keywords = "Automatic gain control (AGC) amplifier, SiGe heterojunction bipolar transistor (HBT), optical transmission system",

author = "Kenichi Ohhata and Tonu Masuda and Eiji Ohue and Katsuyoshi Washio",

year = "1999",

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doi = "10.1109/4.782090",

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volume = "34",

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T1 - Design of a 32.7-GHz Bandwidth AGC Amplifier IC with Wide Dynamic Range Implemented in SiGe HBT

AU - Ohhata, Kenichi

AU - Masuda, Tonu

AU - Ohue, Eiji

AU - Washio, Katsuyoshi

PY - 1999/9

Y1 - 1999/9

N2 - A wide-bandwidth automatic gain control (AGC) amplifier IC was developed using a self-aligned selective-epitaxial SiGe heterojunction bipolar transistor (HBT). A transimpedance load circuit was used, and its damping factor was optimized to achieve a wide bandwidth of 32.7 GHz. Capacitor peaking was introduced to the second variable-gain amplifier in order to obtain a wide gain dynamic range of 19 dB. The amplifier IC has a noise figure of 18 dB and an eye pattern at 25 Gb/s.

AB - A wide-bandwidth automatic gain control (AGC) amplifier IC was developed using a self-aligned selective-epitaxial SiGe heterojunction bipolar transistor (HBT). A transimpedance load circuit was used, and its damping factor was optimized to achieve a wide bandwidth of 32.7 GHz. Capacitor peaking was introduced to the second variable-gain amplifier in order to obtain a wide gain dynamic range of 19 dB. The amplifier IC has a noise figure of 18 dB and an eye pattern at 25 Gb/s.

KW - Automatic gain control (AGC) amplifier

KW - SiGe heterojunction bipolar transistor (HBT)

KW - optical transmission system

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DO - 10.1109/4.782090

M3 - Article

AN - SCOPUS:85008024793

SN - 0018-9200

VL - 34

SP - 1290

EP - 1297

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 9

ER -

Design of a 32.7-GHz Bandwidth AGC Amplifier IC with Wide Dynamic Range Implemented in SiGe HBT

Abstract

Keywords

ASJC Scopus subject areas

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