TY - GEN
T1 - Design of CMOS resonating push-push frequency doubler
AU - Adachi, Hiroshi
AU - Motoyoshi, Mizuki
AU - Takano, Kyoya
AU - Katayama, Kosuke
AU - Amakawa, Shuhei
AU - Yoshida, Takeshi
AU - Fujishima, Minoru
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/7/28
Y1 - 2014/7/28
N2 - This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.
AB - This paper concerns maximizing the conversion gain of a CMOS push-push doubler, in which the drains of a pair of differentially driven MOSFETs are tied together. We propose to insert transmission lines, which act as resonators at the fundamental frequency, between the drains of the MOSFETs. In the simulation of the proposed circuit, it achieved an output power improvement of 2.2 dB at the 0 dBm input power.
KW - CMOS
KW - frequency multiplier
KW - millimeter-wave
UR - http://www.scopus.com/inward/record.url?scp=84934326373&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84934326373&partnerID=8YFLogxK
U2 - 10.1109/IMFEDK.2014.6867082
DO - 10.1109/IMFEDK.2014.6867082
M3 - Conference contribution
AN - SCOPUS:84934326373
T3 - IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai
BT - IMFEDK 2014 - 2014 International Meeting for Future of Electron Devices, Kansai
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2014
Y2 - 19 June 2014 through 20 June 2014
ER -