Detecting halfmetallic electronic structures of spintronic materials in a magnetic field

H. Fujiwara, R. Y. Umetsu, F. Kuroda, J. Miyawaki, T. Kashiuchi, K. Nishimoto, K. Nagai, A. Sekiyama, A. Irizawa, Y. Takeda, Y. Saitoh, T. Oguchi, Y. Harada, S. Suga

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2 Citations (Scopus)


Band-gap engineering is one of the fundamental techniques in semiconductor technology and also applicable in next generation spintronics using the spin degree of freedom. To fully utilize the spintronic materials, it is essential to optimize the spin-dependent electronic structures in the operando conditions by applying magnetic and/or electric fields. Here we present an advanced spectroscopic technique to probe the spin-polarized electronic structures by using magnetic circular dichroism (MCD) in resonant inelastic soft X-ray scattering (RIXS) under an external magnetic field. Thanks to the spin-selective dipole-allowed transitions in RIXS-MCD, we have successfully demonstrated the direct evidence of the perfectly spin-polarized electronic structures for the prototypical halfmetallic Heusller alloy Co 2MnSi. RIXS-MCD is a promising tool to probe the spin-dependent carriers and band-gap induced in the buried magnetic layers in an element specific way under the operando conditions.

Original languageEnglish
Article number18654
JournalScientific Reports
Issue number1
Publication statusPublished - 2021 Dec


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