Detecting real oxygen ions in polycrystalline diamond thin film using secondary ion mass spectrometry

Tsubasa Nakagawa; Isao Sakaguchi; Hajime Haneda; Naoki Ohashi; Yuichi Ikuhara

doi:10.1143/JJAP.46.3391

Detecting real oxygen ions in polycrystalline diamond thin film using secondary ion mass spectrometry

Tsubasa Nakagawa, Isao Sakaguchi, Hajime Haneda, Naoki Ohashi, Yuichi Ikuhara

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Oxygen in a polycrystalline diamond thin film grown by microwave-assisted chemical vapor deposition is evaluated by secondary ion mass spectrometry (SIMS). The depth profile of ¹⁶O measured as a function of the current density of a primary ion beam indicates a variation from a decrease in background intensity to an increase in oxygen intensity due to the signal from diamond. The oxygen concentration in a polycrystalline diamond thin film is 5 × 10^-5 in ¹⁶O/¹³C. The method of analyzing the oxygen concentration in diamond is useful for developing diamond devices.

Original language	English
Pages (from-to)	3391-3393
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	6 A
DOIs	https://doi.org/10.1143/JJAP.46.3391
Publication status	Published - 2007 Jun 6
Externally published	Yes

Keywords

Chemical vapor deposition
Diamond
Oxygen
Secondary ion mass spectrometry

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.46.3391

Cite this

Detecting real oxygen ions in polycrystalline diamond thin film using secondary ion mass spectrometry. / Nakagawa, Tsubasa; Sakaguchi, Isao; Haneda, Hajime et al.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 6 A, 06.06.2007, p. 3391-3393.

Research output: Contribution to journal › Article › peer-review

@article{591d255ea790433bbbd66da0efb068ab,

title = "Detecting real oxygen ions in polycrystalline diamond thin film using secondary ion mass spectrometry",

abstract = "Oxygen in a polycrystalline diamond thin film grown by microwave-assisted chemical vapor deposition is evaluated by secondary ion mass spectrometry (SIMS). The depth profile of 16O measured as a function of the current density of a primary ion beam indicates a variation from a decrease in background intensity to an increase in oxygen intensity due to the signal from diamond. The oxygen concentration in a polycrystalline diamond thin film is 5 × 10-5 in 16O/13C. The method of analyzing the oxygen concentration in diamond is useful for developing diamond devices.",

keywords = "Chemical vapor deposition, Diamond, Oxygen, Secondary ion mass spectrometry",

author = "Tsubasa Nakagawa and Isao Sakaguchi and Hajime Haneda and Naoki Ohashi and Yuichi Ikuhara",

year = "2007",

month = jun,

day = "6",

doi = "10.1143/JJAP.46.3391",

language = "English",

volume = "46",

pages = "3391--3393",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 A",

}

TY - JOUR

T1 - Detecting real oxygen ions in polycrystalline diamond thin film using secondary ion mass spectrometry

AU - Nakagawa, Tsubasa

AU - Sakaguchi, Isao

AU - Haneda, Hajime

AU - Ohashi, Naoki

AU - Ikuhara, Yuichi

PY - 2007/6/6

Y1 - 2007/6/6

N2 - Oxygen in a polycrystalline diamond thin film grown by microwave-assisted chemical vapor deposition is evaluated by secondary ion mass spectrometry (SIMS). The depth profile of 16O measured as a function of the current density of a primary ion beam indicates a variation from a decrease in background intensity to an increase in oxygen intensity due to the signal from diamond. The oxygen concentration in a polycrystalline diamond thin film is 5 × 10-5 in 16O/13C. The method of analyzing the oxygen concentration in diamond is useful for developing diamond devices.

AB - Oxygen in a polycrystalline diamond thin film grown by microwave-assisted chemical vapor deposition is evaluated by secondary ion mass spectrometry (SIMS). The depth profile of 16O measured as a function of the current density of a primary ion beam indicates a variation from a decrease in background intensity to an increase in oxygen intensity due to the signal from diamond. The oxygen concentration in a polycrystalline diamond thin film is 5 × 10-5 in 16O/13C. The method of analyzing the oxygen concentration in diamond is useful for developing diamond devices.

KW - Chemical vapor deposition

KW - Diamond

KW - Oxygen

KW - Secondary ion mass spectrometry

UR - http://www.scopus.com/inward/record.url?scp=34547828852&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547828852&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.3391

DO - 10.1143/JJAP.46.3391

M3 - Article

AN - SCOPUS:34547828852

SN - 0021-4922

VL - 46

SP - 3391

EP - 3393

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 6 A

ER -

Detecting real oxygen ions in polycrystalline diamond thin film using secondary ion mass spectrometry

Abstract

Keywords

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