Detection of Si - H bonds in silicon oxide by x-ray photoelectron spectrum difference

Hiroki Ogawa; Takeo Hattori

doi:10.1063/1.107842

Detection of Si - H bonds in silicon oxide by x-ray photoelectron spectrum difference

Hiroki Ogawa, Takeo Hattori

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Detection of Si - H bonds in silicon oxide from the measurement of x-ray photoelectron spectrum difference is confirmed by the measurement of infrared absorption spectrum difference in the case of silicon native oxides formed during wet chemical treatments of atomically flat hydrogen terminated Si(111) surfaces. The desorption of hydrogen from native oxide is also found from x-ray photoelectron spectrum difference.

Original language	English
Pages (from-to)	577-579
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	5
DOIs	https://doi.org/10.1063/1.107842
Publication status	Published - 1992

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{4f138d2115d04a3798943800d96d6e00,

title = "Detection of Si - H bonds in silicon oxide by x-ray photoelectron spectrum difference",

abstract = "Detection of Si - H bonds in silicon oxide from the measurement of x-ray photoelectron spectrum difference is confirmed by the measurement of infrared absorption spectrum difference in the case of silicon native oxides formed during wet chemical treatments of atomically flat hydrogen terminated Si(111) surfaces. The desorption of hydrogen from native oxide is also found from x-ray photoelectron spectrum difference.",

author = "Hiroki Ogawa and Takeo Hattori",

year = "1992",

doi = "10.1063/1.107842",

language = "English",

volume = "61",

pages = "577--579",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Detection of Si - H bonds in silicon oxide by x-ray photoelectron spectrum difference

AU - Ogawa, Hiroki

AU - Hattori, Takeo

PY - 1992

Y1 - 1992

N2 - Detection of Si - H bonds in silicon oxide from the measurement of x-ray photoelectron spectrum difference is confirmed by the measurement of infrared absorption spectrum difference in the case of silicon native oxides formed during wet chemical treatments of atomically flat hydrogen terminated Si(111) surfaces. The desorption of hydrogen from native oxide is also found from x-ray photoelectron spectrum difference.

AB - Detection of Si - H bonds in silicon oxide from the measurement of x-ray photoelectron spectrum difference is confirmed by the measurement of infrared absorption spectrum difference in the case of silicon native oxides formed during wet chemical treatments of atomically flat hydrogen terminated Si(111) surfaces. The desorption of hydrogen from native oxide is also found from x-ray photoelectron spectrum difference.

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U2 - 10.1063/1.107842

DO - 10.1063/1.107842

M3 - Article

AN - SCOPUS:36449004040

SN - 0003-6951

VL - 61

SP - 577

EP - 579

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Detection of Si - H bonds in silicon oxide by x-ray photoelectron spectrum difference

Abstract

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