Determination of band diagram for a p-n junction between Mott insulator LaMnO3 and band insulator Nb:SrTiO3

M. Kitamura; M. Kobayashi; E. Sakai; R. Takahashi; M. Lippmaa; K. Horiba; H. Fujioka; H. Kumigashira

doi:10.1063/1.4908570

Determination of band diagram for a p-n junction between Mott insulator LaMnO₃ and band insulator Nb:SrTiO₃

M. Kitamura, M. Kobayashi, E. Sakai, R. Takahashi, M. Lippmaa, K. Horiba, H. Fujioka, H. Kumigashira

Research output: Contribution to journal › Article › peer-review

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Abstract

The authors report on the band diagram of epitaxial p-n junctions between the Mott insulator with "p-type carriers" LaMnO₃ and the n-type semiconductor Nb-doped SrTiO₃ (Nb:STO) using x-ray photoemission spectroscopy. By changing the donor concentration in Nb:STO from 0.1 at. to 1.0 at., the value of the built-in potential for the Nb:STO side (V_bn) is reduced from 0.55 ±0.05eV to 0.25±0.05eV. The modulation of V_bn is well described in the framework of the conventional p-n junction model. These results suggest that the characteristics of perovskite oxide p-n junctions can be predicted and designed using the transport properties of the constituent oxides, irrespective of their strongly correlated electronic nature.

Original language	English
Article number	061605
Journal	Applied Physics Letters
Volume	106
Issue number	6
DOIs	https://doi.org/10.1063/1.4908570
Publication status	Published - 2015 Feb 9
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Determination of band diagram for a p-n junction between Mott insulator LaMnO3 and band insulator Nb:SrTiO3",

abstract = "The authors report on the band diagram of epitaxial p-n junctions between the Mott insulator with {"}p-type carriers{"} LaMnO3 and the n-type semiconductor Nb-doped SrTiO3 (Nb:STO) using x-ray photoemission spectroscopy. By changing the donor concentration in Nb:STO from 0.1 at. to 1.0 at., the value of the built-in potential for the Nb:STO side (Vbn) is reduced from 0.55 ±0.05eV to 0.25±0.05eV. The modulation of Vbn is well described in the framework of the conventional p-n junction model. These results suggest that the characteristics of perovskite oxide p-n junctions can be predicted and designed using the transport properties of the constituent oxides, irrespective of their strongly correlated electronic nature.",

author = "M. Kitamura and M. Kobayashi and E. Sakai and R. Takahashi and M. Lippmaa and K. Horiba and H. Fujioka and H. Kumigashira",

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T1 - Determination of band diagram for a p-n junction between Mott insulator LaMnO3 and band insulator Nb:SrTiO3

AU - Kitamura, M.

AU - Kobayashi, M.

AU - Sakai, E.

AU - Takahashi, R.

AU - Lippmaa, M.

AU - Horiba, K.

AU - Fujioka, H.

AU - Kumigashira, H.

PY - 2015/2/9

Y1 - 2015/2/9

N2 - The authors report on the band diagram of epitaxial p-n junctions between the Mott insulator with "p-type carriers" LaMnO3 and the n-type semiconductor Nb-doped SrTiO3 (Nb:STO) using x-ray photoemission spectroscopy. By changing the donor concentration in Nb:STO from 0.1 at. to 1.0 at., the value of the built-in potential for the Nb:STO side (Vbn) is reduced from 0.55 ±0.05eV to 0.25±0.05eV. The modulation of Vbn is well described in the framework of the conventional p-n junction model. These results suggest that the characteristics of perovskite oxide p-n junctions can be predicted and designed using the transport properties of the constituent oxides, irrespective of their strongly correlated electronic nature.

AB - The authors report on the band diagram of epitaxial p-n junctions between the Mott insulator with "p-type carriers" LaMnO3 and the n-type semiconductor Nb-doped SrTiO3 (Nb:STO) using x-ray photoemission spectroscopy. By changing the donor concentration in Nb:STO from 0.1 at. to 1.0 at., the value of the built-in potential for the Nb:STO side (Vbn) is reduced from 0.55 ±0.05eV to 0.25±0.05eV. The modulation of Vbn is well described in the framework of the conventional p-n junction model. These results suggest that the characteristics of perovskite oxide p-n junctions can be predicted and designed using the transport properties of the constituent oxides, irrespective of their strongly correlated electronic nature.

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Determination of band diagram for a p-n junction between Mott insulator LaMnO₃ and band insulator Nb:SrTiO₃

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