Deterministic Single-Ion Implantation Method for Extending CMOS Technologies

The true potential of semiconductors, the basic material in transistors, has been realized by adding dopants to tailor their electronic properties; this has conventionally been achieved through a doping process. Doping control is an essential requirement, particularly when the device scale is in the deep sub-30 nm regime. In the immediate future, scaled-down transistors will contain only a small number of dopants in the channel, where a random distribution of dopants will cause significant variations in transistor performances.