Deterministic Single-Ion Implantation Method for Extending CMOS Technologies

Research output: Chapter in Book/Report/Conference proceedingChapter


The true potential of semiconductors, the basic material in transistors, has been realized by adding dopants to tailor their electronic properties; this has conventionally been achieved through a doping process. Doping control is an essential requirement, particularly when the device scale is in the deep sub-30 nm regime. In the immediate future, scaled-down transistors will contain only a small number of dopants in the channel, where a random distribution of dopants will cause significant variations in transistor performances.

Original languageEnglish
Title of host publicationSingle-Atom Nanoelectronics
PublisherPan Stanford Publishing Pte. Ltd.
Number of pages30
ISBN (Electronic)9789814316699
ISBN (Print)9789814316316
Publication statusPublished - 2013 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Engineering(all)


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