Development of an X-band filter using air-gap-type film bulk acoustic resonators

Masanori Ueda; Motoaki Hara; Shinji Taniguchi; Tsuyoshi Yokoyama; Tokihiro Nishlhara; Ken Ya Hashimoto; Yoshio Satoh

doi:10.1143/JJAP.47.4007

Development of an X-band filter using air-gap-type film bulk acoustic resonators

Masanori Ueda, Motoaki Hara, Shinji Taniguchi, Tsuyoshi Yokoyama, Tokihiro Nishlhara, Ken Ya Hashimoto, Yoshio Satoh

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

We have developed an X-band filter utilizing air-gap-type film bulk acoustic resonators (FBARs). The air-gap structure is simple and cost-effective. Results from both simulations and experiments demonstrate that a dome-shaped air gap was formed between the substrate surface and the bottom electrode and that an air-gap-type FBAR structure was possible. The air gap can be formed on the flat substrate using stress control of piezoelectric and metal films without using a thick sacrificial layer. As a result, the fabricated X-band FBAR operated successfully with a k_eff² of 6.30%, a resonance Q of 246, and an antiresonance Q of 462. The fabricated filter had a center frequency of 9.07 GHz, a fractional bandwidth of 3.1% and a minimum insertion loss of 1.7 dB.

Original language	English
Pages (from-to)	4007-4010
Number of pages	4
Journal	Japanese journal of applied physics
Volume	47
Issue number	5 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.4007
Publication status	Published - 2008 May 23

Keywords

Air-gap
Bulk acoustic wave (BAW)
Coupling factor (K )
Film bulk acoustic resonator (FBAR)
Mobile communication
Piezoelectric thin-film resonator
Q factor
Solidly mounted resonator (SMR)
Surface acoustic wave (SAW)

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.47.4007

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title = "Development of an X-band filter using air-gap-type film bulk acoustic resonators",

abstract = "We have developed an X-band filter utilizing air-gap-type film bulk acoustic resonators (FBARs). The air-gap structure is simple and cost-effective. Results from both simulations and experiments demonstrate that a dome-shaped air gap was formed between the substrate surface and the bottom electrode and that an air-gap-type FBAR structure was possible. The air gap can be formed on the flat substrate using stress control of piezoelectric and metal films without using a thick sacrificial layer. As a result, the fabricated X-band FBAR operated successfully with a keff2 of 6.30%, a resonance Q of 246, and an antiresonance Q of 462. The fabricated filter had a center frequency of 9.07 GHz, a fractional bandwidth of 3.1% and a minimum insertion loss of 1.7 dB.",

keywords = "Air-gap, Bulk acoustic wave (BAW), Coupling factor (K ), Film bulk acoustic resonator (FBAR), Mobile communication, Piezoelectric thin-film resonator, Q factor, Solidly mounted resonator (SMR), Surface acoustic wave (SAW)",

author = "Masanori Ueda and Motoaki Hara and Shinji Taniguchi and Tsuyoshi Yokoyama and Tokihiro Nishlhara and Hashimoto, {Ken Ya} and Yoshio Satoh",

year = "2008",

month = may,

day = "23",

doi = "10.1143/JJAP.47.4007",

language = "English",

volume = "47",

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T1 - Development of an X-band filter using air-gap-type film bulk acoustic resonators

AU - Ueda, Masanori

AU - Hara, Motoaki

AU - Taniguchi, Shinji

AU - Yokoyama, Tsuyoshi

AU - Nishlhara, Tokihiro

AU - Hashimoto, Ken Ya

AU - Satoh, Yoshio

PY - 2008/5/23

Y1 - 2008/5/23

N2 - We have developed an X-band filter utilizing air-gap-type film bulk acoustic resonators (FBARs). The air-gap structure is simple and cost-effective. Results from both simulations and experiments demonstrate that a dome-shaped air gap was formed between the substrate surface and the bottom electrode and that an air-gap-type FBAR structure was possible. The air gap can be formed on the flat substrate using stress control of piezoelectric and metal films without using a thick sacrificial layer. As a result, the fabricated X-band FBAR operated successfully with a keff2 of 6.30%, a resonance Q of 246, and an antiresonance Q of 462. The fabricated filter had a center frequency of 9.07 GHz, a fractional bandwidth of 3.1% and a minimum insertion loss of 1.7 dB.

AB - We have developed an X-band filter utilizing air-gap-type film bulk acoustic resonators (FBARs). The air-gap structure is simple and cost-effective. Results from both simulations and experiments demonstrate that a dome-shaped air gap was formed between the substrate surface and the bottom electrode and that an air-gap-type FBAR structure was possible. The air gap can be formed on the flat substrate using stress control of piezoelectric and metal films without using a thick sacrificial layer. As a result, the fabricated X-band FBAR operated successfully with a keff2 of 6.30%, a resonance Q of 246, and an antiresonance Q of 462. The fabricated filter had a center frequency of 9.07 GHz, a fractional bandwidth of 3.1% and a minimum insertion loss of 1.7 dB.

KW - Air-gap

KW - Bulk acoustic wave (BAW)

KW - Coupling factor (K )

KW - Film bulk acoustic resonator (FBAR)

KW - Mobile communication

KW - Piezoelectric thin-film resonator

KW - Q factor

KW - Solidly mounted resonator (SMR)

KW - Surface acoustic wave (SAW)

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ER -

Development of an X-band filter using air-gap-type film bulk acoustic resonators

Abstract

Keywords

ASJC Scopus subject areas

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