Development of compact coherent EUV source based on laser Compton scattering

S. Kashiwagi, R. Kato, G. Isoyama, K. Sakaue, A. Masuda, T. Nomoto, T. Gowa, M. Washio, R. Kuroda, J. Urakawa

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


High-power extreme ultra-violet (EUV) sources are required for next generation semiconductor lithography. We start to develop a compact EUV source in the spectral range 13-14 nm, which is based on a laser Compton scattering between a 7 MeV micro-bucnhed electron beam and a high-intensity CO2 laser pulse. The electron beam extracted from a DC photocathode gun is micro-bunched using a laser modulation techinque with the Compton wavelength at a harmonic of the seeding laser before the main laser Compton scattering for EUV generation. A considerating scheme for the compact EUV source based on the laser Compton scattering with micro-bunched electron beam and the analytical study of micro-bunch generation are described in this paper.

Original languageEnglish
Pages (from-to)1112-1115
Number of pages4
JournalRadiation Physics and Chemistry
Issue number12
Publication statusPublished - 2009 Dec


  • Coherent
  • Compton scattering
  • EUV
  • Free electron laser (FEL)
  • Linac
  • Micro-bunched beam


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