Development of drain current model for oxide semiconductor thin film transistors

Hiroshi Tsuji; Yoshiki Nakajima; Toshihiro Yamamoto; Mitsuru Nakata; Yoshihide Fujisaki; Hideo Fujikake; Hiroto Sato; Tatsuya Takei

doi:10.1109/IAS.2012.6374050

Development of drain current model for oxide semiconductor thin film transistors

Hiroshi Tsuji, Yoshiki Nakajima, Toshihiro Yamamoto, Mitsuru Nakata, Yoshihide Fujisaki, Hideo Fujikake, Hiroto Sato, Tatsuya Takei

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new physics-based and computationally efficient drain current model for oxide semiconductor thin film transistors (TFTs) is developed. In this model, the influence of trap states in the band gap is taken into account to reproduce the gradual increase of the subthreshold current. Analytical expressions for the trapped electron densities are used to reduce the calculation time when solving the Poisson equation. The developed drain current model includes both drift and diffusion components, and it can thus be applied to the subthreshold, linear, and saturation regions. Calculations using the model produce results that are in good agreement with the measured drain current characteristics of amorphous indium gallium zinc oxide TFTs over a wide range of gate and drain voltages. The presented model is expected to play an important role in the analysis of TFT characteristics and the design of TFT structures to realize large-sized, high quality sheet-type displays with oxide semiconductor TFT backplanes.

Original language	English
Title of host publication	2012 IEEE Industry Applications Society Annual Meeting, IAS 2012
DOIs	https://doi.org/10.1109/IAS.2012.6374050
Publication status	Published - 2012
Externally published	Yes
Event	2012 IEEE Industry Applications Society Annual Meeting, IAS 2012 - Las Vegas, NV, United States Duration: 2012 Oct 7 → 2012 Oct 11

Publication series

Name	Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)
ISSN (Print)	0197-2618

Other

Other	2012 IEEE Industry Applications Society Annual Meeting, IAS 2012
Country/Territory	United States
City	Las Vegas, NV
Period	12/10/7 → 12/10/11

Keywords

Displays
Semiconductor device modeling
Thin film transistors
Wide band gap semiconductors

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/IAS.2012.6374050

Cite this

Tsuji, H., Nakajima, Y., Yamamoto, T., Nakata, M., Fujisaki, Y., Fujikake, H., Sato, H., & Takei, T. (2012). Development of drain current model for oxide semiconductor thin film transistors. In 2012 IEEE Industry Applications Society Annual Meeting, IAS 2012 [6374050] (Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)). https://doi.org/10.1109/IAS.2012.6374050

Development of drain current model for oxide semiconductor thin film transistors. / Tsuji, Hiroshi; Nakajima, Yoshiki; Yamamoto, Toshihiro et al.
2012 IEEE Industry Applications Society Annual Meeting, IAS 2012. 2012. 6374050 (Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsuji, H, Nakajima, Y, Yamamoto, T, Nakata, M, Fujisaki, Y, Fujikake, H, Sato, H & Takei, T 2012, Development of drain current model for oxide semiconductor thin film transistors. in 2012 IEEE Industry Applications Society Annual Meeting, IAS 2012., 6374050, Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), 2012 IEEE Industry Applications Society Annual Meeting, IAS 2012, Las Vegas, NV, United States, 12/10/7. https://doi.org/10.1109/IAS.2012.6374050

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title = "Development of drain current model for oxide semiconductor thin film transistors",

abstract = "A new physics-based and computationally efficient drain current model for oxide semiconductor thin film transistors (TFTs) is developed. In this model, the influence of trap states in the band gap is taken into account to reproduce the gradual increase of the subthreshold current. Analytical expressions for the trapped electron densities are used to reduce the calculation time when solving the Poisson equation. The developed drain current model includes both drift and diffusion components, and it can thus be applied to the subthreshold, linear, and saturation regions. Calculations using the model produce results that are in good agreement with the measured drain current characteristics of amorphous indium gallium zinc oxide TFTs over a wide range of gate and drain voltages. The presented model is expected to play an important role in the analysis of TFT characteristics and the design of TFT structures to realize large-sized, high quality sheet-type displays with oxide semiconductor TFT backplanes.",

keywords = "Displays, Semiconductor device modeling, Thin film transistors, Wide band gap semiconductors",

author = "Hiroshi Tsuji and Yoshiki Nakajima and Toshihiro Yamamoto and Mitsuru Nakata and Yoshihide Fujisaki and Hideo Fujikake and Hiroto Sato and Tatsuya Takei",

year = "2012",

doi = "10.1109/IAS.2012.6374050",

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series = "Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)",

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AU - Tsuji, Hiroshi

AU - Nakajima, Yoshiki

AU - Yamamoto, Toshihiro

AU - Nakata, Mitsuru

AU - Fujisaki, Yoshihide

AU - Fujikake, Hideo

AU - Sato, Hiroto

AU - Takei, Tatsuya

PY - 2012

Y1 - 2012

N2 - A new physics-based and computationally efficient drain current model for oxide semiconductor thin film transistors (TFTs) is developed. In this model, the influence of trap states in the band gap is taken into account to reproduce the gradual increase of the subthreshold current. Analytical expressions for the trapped electron densities are used to reduce the calculation time when solving the Poisson equation. The developed drain current model includes both drift and diffusion components, and it can thus be applied to the subthreshold, linear, and saturation regions. Calculations using the model produce results that are in good agreement with the measured drain current characteristics of amorphous indium gallium zinc oxide TFTs over a wide range of gate and drain voltages. The presented model is expected to play an important role in the analysis of TFT characteristics and the design of TFT structures to realize large-sized, high quality sheet-type displays with oxide semiconductor TFT backplanes.

AB - A new physics-based and computationally efficient drain current model for oxide semiconductor thin film transistors (TFTs) is developed. In this model, the influence of trap states in the band gap is taken into account to reproduce the gradual increase of the subthreshold current. Analytical expressions for the trapped electron densities are used to reduce the calculation time when solving the Poisson equation. The developed drain current model includes both drift and diffusion components, and it can thus be applied to the subthreshold, linear, and saturation regions. Calculations using the model produce results that are in good agreement with the measured drain current characteristics of amorphous indium gallium zinc oxide TFTs over a wide range of gate and drain voltages. The presented model is expected to play an important role in the analysis of TFT characteristics and the design of TFT structures to realize large-sized, high quality sheet-type displays with oxide semiconductor TFT backplanes.

KW - Displays

KW - Semiconductor device modeling

KW - Thin film transistors

KW - Wide band gap semiconductors

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ER -

Development of drain current model for oxide semiconductor thin film transistors

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