Development of evaluation method for estimating stress-induced change in drain current in deep-sub-micron MOSFETs

A method for predicting the change in the drain current of deep-sub-micron MOSFETs due to strain was developed. The change in MOSFET drain current can be explained as a linear function of normal strains. The strain sensitivities of the drain current of MOSFETs were clarified experimentally. The drain current of an N-MOSFET increases with increases in in-plane tensile strains and normal compressive strain. On the other hand, the drain current of a P-MOSFET increases with in-plane compressive strain parallel to the channel, and in-plane tensile strain perpendicular to the channel. It also increases with normal tensile strain. The predicted values agreed well with the measured ones. This method for predicting change in the drain current due to stress will help us to improve electronic performance of MOSFETs.