TY - GEN
T1 - Development of glyoxylic acid based electroless copper deposition on ruthenium
AU - Inoue, Fumihiro
AU - Philipsen, Harold
AU - Van Der Veen, Marleen H.
AU - Van Huylenbroeck, Stefaan
AU - Armini, Silvia
AU - Struyf, Herbert
AU - Shingubara, Shoso
AU - Tanaka, Tetsu
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2014
Y1 - 2014
N2 - Glyoxylic acid is seen as a promising candidate to replace formaldehyde as reducing agent in electroless Cu baths. For deposition on ruthenium, the anodic reaction of glyoxylic acid has been evaluated and compared to formaldehyde using linear sweep voltammetry. Significant differences were observed for the deposition of copper on ruthenium. First of all, a faster nucleation to shorten the total process time, was inferred from open-circuit potential measurements. Secondary, we found 2,2' bipyridyl worked as stabilizer, brightener, and suppressor in this glyoxylic acid-based electroless bath. Thirdly, the purity of the copper films improved when 2,2' bipyridyl was present in the solution. Using the optimized composition for the electroless bath, we demonstrate a conformal Cu seed layer deposition (~100 nm) inside high aspect ratio (16.7) through Si vias. This work shows the potential for electroless Cu seeding for a through Si via metallization.
AB - Glyoxylic acid is seen as a promising candidate to replace formaldehyde as reducing agent in electroless Cu baths. For deposition on ruthenium, the anodic reaction of glyoxylic acid has been evaluated and compared to formaldehyde using linear sweep voltammetry. Significant differences were observed for the deposition of copper on ruthenium. First of all, a faster nucleation to shorten the total process time, was inferred from open-circuit potential measurements. Secondary, we found 2,2' bipyridyl worked as stabilizer, brightener, and suppressor in this glyoxylic acid-based electroless bath. Thirdly, the purity of the copper films improved when 2,2' bipyridyl was present in the solution. Using the optimized composition for the electroless bath, we demonstrate a conformal Cu seed layer deposition (~100 nm) inside high aspect ratio (16.7) through Si vias. This work shows the potential for electroless Cu seeding for a through Si via metallization.
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U2 - 10.1149/06440.0041ecst
DO - 10.1149/06440.0041ecst
M3 - Conference contribution
AN - SCOPUS:84930241139
T3 - ECS Transactions
SP - 41
EP - 55
BT - Processing Materials of 3D Interconnects, Damascene, and Electronics Packaging 6
A2 - Kondo, K.
A2 - Akolkar, R.
A2 - Barkey, D. P.
A2 - Dow, W. P.
A2 - Hayase, M.
A2 - Koyanagi, M.
A2 - Mathad, S.
A2 - Ramm, P.
A2 - Roozeboom, F.
A2 - Shingubara, S.
PB - Electrochemical Society Inc.
T2 - Symposium on Processing Materials of 3D Interconnects, Damascene, and Electronics Packaging 6 - 2014 ECS and SMEQ Joint International Meeting
Y2 - 5 October 2014 through 9 October 2014
ER -