Abstract
We have developed aluminum nitride (AlN) epitaxial growth technology using Knudsen pressure MO-CVD method. The thickness uniformity was ±1%. However groove-like cracks were formed on the surface of the AlN epitaxial film. AlN deposition on off-angle substrates and the AlN deposition at high temperature have been investigated for eliminating the cracks on the surface. AlN deposition on Al2O3 surface which is -4 degree off-angle from c'-axis has resulted in elimination of the cracks from the SEM (Scanning Electron Microscope) observations. The crack of AlN film deposited at a higher temperature of 1140°C/40mTorr is found to be completely eliminated on the whole 2″-φ wafer from the SEM and laser-scan microscope observations. The propagation loss has been evaluated from the characteristics of time domain impulse response of 2.4GHz matched filters fabricated on 2″-φ wafers. The propagation loss of crackless AlN films is drastically improved by one order compared with that of cracked AlN films.
| Original language | English |
|---|---|
| Pages (from-to) | 263-267 |
| Number of pages | 5 |
| Journal | Proceedings of the IEEE Ultrasonics Symposium |
| Volume | 1 |
| Publication status | Published - 1999 Dec 1 |
| Event | 1999 IEEE Ultrasonics Symposium - Caesars Tahoe, NV, USA Duration: 1999 Oct 17 → 1999 Oct 20 |
ASJC Scopus subject areas
- Acoustics and Ultrasonics