TY - GEN
T1 - Development of Manganese Nitride Resistor with Near-Zero Temperature-Coefficient of Resistance to Achieve High-Thermal-Stability ICs
AU - Kino, Hisashi
AU - Fukushima, Takafumi
AU - Tanaka, Tetsu
N1 - Funding Information:
ACKNOWLEDGMENT This work was supported by JSPS KAKENHI Grant Number JP20H02193. This work was supported by the Frontier Research Institute for Interdisciplinary Sciences (FRIS) Tohoku University. This work was also supported through the activities of VDEC, The University of Tokyo, in collaboration with Cadence Design Systems. This work was performed in the Micro/Nano-Machining Research and Education Center at Tohoku University.
Funding Information:
This work was supported by JSPS KAKENHI Grant Number JP20H02193. This work was supported by the Frontier Research Institute for Interdisciplinary Sciences (FRIS) Tohoku University. This work was also supported through the activities of VDEC, The University of Tokyo, in collaboration with Cadence Design Systems. This work was performed in the Micro/Nano-Machining Research and Education Center at Tohoku University.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/7/6
Y1 - 2021/7/6
N2 - The resistance of the metal wirings in the integrated circuits increases due to the decrease of the mean free path of electrons with the temperature increase. This thermal instability requires redundancy circuits. On the other hand, several materials have the saturation characteristics of the mean free path around room temperature. The anti-perovskite manganese nitride compound material is one of them. The anti-perovskite manganese nitride compounds show a flat resistance-temperature curve around room temperature. However, the flat resistance-temperature curves have been obtained with only the sintered bulk materials. It has not become clear the characteristics of the manganese nitride compounds in the micro/nanoscale. In this study, we proposed manganese nitride wiring for high-thermal-stability systems. Then, we fabricated and evaluated the micro/nanoscale manganese nitride compound wiring with the complementary metal-oxide-semiconductor compatible process.
AB - The resistance of the metal wirings in the integrated circuits increases due to the decrease of the mean free path of electrons with the temperature increase. This thermal instability requires redundancy circuits. On the other hand, several materials have the saturation characteristics of the mean free path around room temperature. The anti-perovskite manganese nitride compound material is one of them. The anti-perovskite manganese nitride compounds show a flat resistance-temperature curve around room temperature. However, the flat resistance-temperature curves have been obtained with only the sintered bulk materials. It has not become clear the characteristics of the manganese nitride compounds in the micro/nanoscale. In this study, we proposed manganese nitride wiring for high-thermal-stability systems. Then, we fabricated and evaluated the micro/nanoscale manganese nitride compound wiring with the complementary metal-oxide-semiconductor compatible process.
KW - Manganese Nitride
KW - NZ-TCR
KW - Resistor
KW - Wiring technology
UR - http://www.scopus.com/inward/record.url?scp=85116289520&partnerID=8YFLogxK
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U2 - 10.1109/IITC51362.2021.9537336
DO - 10.1109/IITC51362.2021.9537336
M3 - Conference contribution
AN - SCOPUS:85116289520
T3 - 2021 IEEE International Interconnect Technology Conference, IITC 2021
BT - 2021 IEEE International Interconnect Technology Conference, IITC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th Annual IEEE International Interconnect Technology Conference, IITC 2021
Y2 - 6 July 2021 through 9 July 2021
ER -