Development of MEMS capacitive sensor using a MOSFET structure

Hayato Izumi, Yohei Matsumoto, Seiji Aoyagi, Yusaku Harada, Shoso Shingubara, Minoru Sasaki, Kazuhiro Hane, Hiroshi Tokunaga

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The concept of a capacitive MOSFET sensor using a SOI wafer for detecting vertical force applied to its floating gate was already reported by the authors. A MOSFET is fabricated on a SOI wafer, and the box oxide under the gate is removed to release the gate structure. This sensor detects the displacement of the movable gate electrode from changes in drain current, and this current can be amplified electrically by adding voltage to the gate, i.e., the MOSFET itself serves as a mechanical sensor structure. Following this, the present paper reports the fabrication of a practical test device and its preliminary characterization. The present paper also proposes a circuitry, which converts the drain current change to the voltage change while compensating the temperature change. The performance of this circuitry is confirmed by SPICE simulation. In accelerometer application, a comparatively heavy proof mass and thin supporting beams are necessary for increasing the sensitivity. For this purpose, a fabrication process of depositing a thick mass structure using electroplating is newly proposed.

Original languageEnglish
Pages (from-to)102-107
Number of pages6
JournalIEEJ Transactions on Sensors and Micromachines
Issue number3
Publication statusPublished - 2008


  • Accelerometer
  • Capacitive sensor
  • Circuit for temperature compensation

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering


Dive into the research topics of 'Development of MEMS capacitive sensor using a MOSFET structure'. Together they form a unique fingerprint.

Cite this