TY - JOUR
T1 - Development of OXSIM2D
T2 - A Simulation Program of SiO2 Growth and Stress Generation in Thermal Oxidation Process of Silicon
AU - Saito, Naoto
AU - Sakata, Shinji
AU - Ikegawa, Masahiro
AU - Miura, Hideo
AU - Ohta, Hiroyuki
AU - Shimizu, Tasuku
AU - Isomae, Seiichi
AU - Masuda, Hiroo
PY - 1991
Y1 - 1991
N2 - A simulation program which can calculate SiO2 growth and stress generation caused by growth in the thermal oxidation process of silicon is developed. This process is used in fabricating semiconductor devices. The oxidation process is modeled as a sequence of three primary processes as follows: diffusion of oxidizing species through an already existing SiO2 layer, Si/SiO2 boundary movement and dilatation of the transition region from silicon to SiO2. The finite-element method is used in diffusion analysis and stress analysis, and the body-fit method is used as an automatic mesh generator. In addition, stress dependency and the effect of ‘white ribbon’ on oxidation are modeled in the program to increase accuracy. Simulation results showed good agreement with experiments of some LOCOS structures with various thicknesses of the Si3N4 mask.
AB - A simulation program which can calculate SiO2 growth and stress generation caused by growth in the thermal oxidation process of silicon is developed. This process is used in fabricating semiconductor devices. The oxidation process is modeled as a sequence of three primary processes as follows: diffusion of oxidizing species through an already existing SiO2 layer, Si/SiO2 boundary movement and dilatation of the transition region from silicon to SiO2. The finite-element method is used in diffusion analysis and stress analysis, and the body-fit method is used as an automatic mesh generator. In addition, stress dependency and the effect of ‘white ribbon’ on oxidation are modeled in the program to increase accuracy. Simulation results showed good agreement with experiments of some LOCOS structures with various thicknesses of the Si3N4 mask.
KW - Computational Mechanics
KW - Electronic Equipment
KW - Finite-Element Method
KW - Numerical Analysis
KW - Oxidation
KW - Semiconductor
KW - Structural Analysis
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U2 - 10.1299/kikaia.57.2057
DO - 10.1299/kikaia.57.2057
M3 - Article
AN - SCOPUS:0026226093
SN - 0387-5008
VL - 57
SP - 2057
EP - 2062
JO - Nihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A
JF - Nihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A
IS - 541
ER -