Development of Si double-sided microelectrode for platform of brain signal processing system

Risato Kobayashi, Soichiro Kanno, Lee Sanghoon, Bea Jicheol, Takafumi Fukushima, Kazuhiro Sakamoto, Norihiro Katayama, Hajime Mushiake, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We have proposed a new implantable neural recording system, which we call the brain signal processing system (BSPS). In this system, LSI chips such as amplifiers, analog-to-digital converters, and multiplexers are integrated on the Si microelectrode array. To analyze the brain functions or to develop medical treatments for brain disorders, a high-density recording of action potentials is strongly required. To realize high-density recording of action potentials, we propose a novel Si double-sided microelectrode that has recording sites on both front and back sides. The back-side recording sites are connected to a recording apparatus by wire bonding through Si via holes. We fabricated the carefully designed Si double-sided microelectrode and evaluated the electrical characteristics of the Si microelectrode. The front-and back-side recording sites had impedance values of 2.5 and 2.7Mω at 1 kHz, respectively, which indicated that both recording sites have equivalent characteristics. An in vitro experiment of neuronal action potential recording using the fabricated Si double-sided microelectrode was performed. The CA1 areas of 400-mm-thick hippocampal slices obtained from the brains of guinea pigs were employed, and we successfully recorded neuronal action potentials from the recording sites of both sides.

Original languageEnglish
Article number04C194
JournalJapanese Journal of Applied Physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 2009 Apr

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