Development of silicon wafer packaging technology for deep uv led

Hirofumi Chiba, Yukio Suzuki, Yoshiaki Yasuda, Mitsuyasu Kumagai, Takaaki Koyama, Shuji Tanaka

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


This paper reports a deep-UV LED package based on silicon MEMS process technology. The package (Si-PKG) consists of a cavity formed by silicon crystalline anisotropic etching, through-silicon vias (TSV) filled with electroplated Cu, bonding metals made of electroplated Ni/AuSn and a quartz lid for hermetic sealing. A deep-UV LED chip is directly mounted in the Si-PKG by AuSn eutectic bonding. It has advantages in terms of heat dissipation, light utilization efficiency, productivity and cost over conventional AlN ceramic packages. We confirmed a light output of 30 mW and effective reflection on Si (111) cavity slopes in the Si-PKG. Further improvement of the optical output is expected.

Original languageEnglish
Pages (from-to)152-157
Number of pages6
JournalIEEJ Transactions on Sensors and Micromachines
Issue number7
Publication statusPublished - 2020


  • Crystalline anisotropic etching
  • Deep ultraviolet LED
  • Hermetic sealing
  • Temporary bonding
  • Through-silicon via (TSV)
  • Wafer-level packaging


Dive into the research topics of 'Development of silicon wafer packaging technology for deep uv led'. Together they form a unique fingerprint.

Cite this