Development of silicon wafer packaging technology for deep uv led

Hirofumi Chiba; Yukio Suzuki; Yoshiaki Yasuda; Mitsuyasu Kumagai; Takaaki Koyama; Shuji Tanaka

doi:10.1541/IEEJSMAS.140.152

Development of silicon wafer packaging technology for deep uv led

Hirofumi Chiba, Yukio Suzuki, Yoshiaki Yasuda, Mitsuyasu Kumagai, Takaaki Koyama, Shuji Tanaka

Stanley Electric Co., Ltd.

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This paper reports a deep-UV LED package based on silicon MEMS process technology. The package (Si-PKG) consists of a cavity formed by silicon crystalline anisotropic etching, through-silicon vias (TSV) filled with electroplated Cu, bonding metals made of electroplated Ni/AuSn and a quartz lid for hermetic sealing. A deep-UV LED chip is directly mounted in the Si-PKG by AuSn eutectic bonding. It has advantages in terms of heat dissipation, light utilization efficiency, productivity and cost over conventional AlN ceramic packages. We confirmed a light output of 30 mW and effective reflection on Si (111) cavity slopes in the Si-PKG. Further improvement of the optical output is expected.

Original language	English
Pages (from-to)	152-157
Number of pages	6
Journal	IEEJ Transactions on Sensors and Micromachines
Volume	140
Issue number	7
DOIs	https://doi.org/10.1541/IEEJSMAS.140.152
Publication status	Published - 2020

Keywords

Crystalline anisotropic etching
Deep ultraviolet LED
Hermetic sealing
Temporary bonding
Through-silicon via (TSV)
Wafer-level packaging

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10.1541/IEEJSMAS.140.152

Cite this

@article{c160402be64a4bf587f8b0642fe6010b,

title = "Development of silicon wafer packaging technology for deep uv led",

abstract = "This paper reports a deep-UV LED package based on silicon MEMS process technology. The package (Si-PKG) consists of a cavity formed by silicon crystalline anisotropic etching, through-silicon vias (TSV) filled with electroplated Cu, bonding metals made of electroplated Ni/AuSn and a quartz lid for hermetic sealing. A deep-UV LED chip is directly mounted in the Si-PKG by AuSn eutectic bonding. It has advantages in terms of heat dissipation, light utilization efficiency, productivity and cost over conventional AlN ceramic packages. We confirmed a light output of 30 mW and effective reflection on Si (111) cavity slopes in the Si-PKG. Further improvement of the optical output is expected.",

keywords = "Crystalline anisotropic etching, Deep ultraviolet LED, Hermetic sealing, Temporary bonding, Through-silicon via (TSV), Wafer-level packaging",

author = "Hirofumi Chiba and Yukio Suzuki and Yoshiaki Yasuda and Mitsuyasu Kumagai and Takaaki Koyama and Shuji Tanaka",

note = "Publisher Copyright: {\textcopyright} 2020 The Institute of Electrical Engineers of Japan.",

year = "2020",

doi = "10.1541/IEEJSMAS.140.152",

language = "English",

volume = "140",

pages = "152--157",

journal = "IEEJ Transactions on Sensors and Micromachines",

issn = "1341-8939",

publisher = "The Institute of Electrical Engineers of Japan",

number = "7",

}

TY - JOUR

T1 - Development of silicon wafer packaging technology for deep uv led

AU - Chiba, Hirofumi

AU - Suzuki, Yukio

AU - Yasuda, Yoshiaki

AU - Kumagai, Mitsuyasu

AU - Koyama, Takaaki

AU - Tanaka, Shuji

PY - 2020

Y1 - 2020

N2 - This paper reports a deep-UV LED package based on silicon MEMS process technology. The package (Si-PKG) consists of a cavity formed by silicon crystalline anisotropic etching, through-silicon vias (TSV) filled with electroplated Cu, bonding metals made of electroplated Ni/AuSn and a quartz lid for hermetic sealing. A deep-UV LED chip is directly mounted in the Si-PKG by AuSn eutectic bonding. It has advantages in terms of heat dissipation, light utilization efficiency, productivity and cost over conventional AlN ceramic packages. We confirmed a light output of 30 mW and effective reflection on Si (111) cavity slopes in the Si-PKG. Further improvement of the optical output is expected.

AB - This paper reports a deep-UV LED package based on silicon MEMS process technology. The package (Si-PKG) consists of a cavity formed by silicon crystalline anisotropic etching, through-silicon vias (TSV) filled with electroplated Cu, bonding metals made of electroplated Ni/AuSn and a quartz lid for hermetic sealing. A deep-UV LED chip is directly mounted in the Si-PKG by AuSn eutectic bonding. It has advantages in terms of heat dissipation, light utilization efficiency, productivity and cost over conventional AlN ceramic packages. We confirmed a light output of 30 mW and effective reflection on Si (111) cavity slopes in the Si-PKG. Further improvement of the optical output is expected.

KW - Crystalline anisotropic etching

KW - Deep ultraviolet LED

KW - Hermetic sealing

KW - Temporary bonding

KW - Through-silicon via (TSV)

KW - Wafer-level packaging

UR - http://www.scopus.com/inward/record.url?scp=85091835409&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85091835409&partnerID=8YFLogxK

U2 - 10.1541/IEEJSMAS.140.152

DO - 10.1541/IEEJSMAS.140.152

M3 - Article

AN - SCOPUS:85091835409

SN - 1341-8939

VL - 140

SP - 152

EP - 157

JO - IEEJ Transactions on Sensors and Micromachines

JF - IEEJ Transactions on Sensors and Micromachines

IS - 7

ER -

Development of silicon wafer packaging technology for deep uv led

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