TY - JOUR
T1 - Development of silicon wafer packaging technology for deep UV LED
AU - Chiba, Hirofumi
AU - Suzuki, Yukio
AU - Yasuda, Yoshiaki
AU - Kumagai, Mitsuyasu
AU - Koyama, Takaaki
AU - Tanaka, Shuji
N1 - Funding Information:
A major part of the manufacturing process was done using a common facility in Microsystem Integration Center, Tohoku University, which is partly supported by the Ministry of Education, Culture, Sports, Science and Technology's Nanotechnology Platform Program.
Publisher Copyright:
© 2020 Wiley Periodicals, Inc.
PY - 2021/3
Y1 - 2021/3
N2 - This paper reports a deep-ultraviolet LED (deep-UV-LED) package based on silicon MEMS process technology (Si-PKG). The package consists of a cavity formed by silicon crystalline anisotropic etching, through-silicon vias (TSVs) filled with electroplated Cu, bonding metals made of electroplated Ni/AuSn and a quartz lid for hermetic sealing. A deep-UV LED die is directly mounted in the Si-PKG by AuSn eutectic bonding without a submount. It has advantages in terms of size, heat dissipation, light utilization efficiency, productivity and cost over conventional AlN ceramic packages. We confirmed a light output of 30 mW and effective reflection on Si (111) cavity slopes in the Si-PKG. Based on simulation, further improvement of the optical output is expected by optimizing DUV-LED die mount condition.
AB - This paper reports a deep-ultraviolet LED (deep-UV-LED) package based on silicon MEMS process technology (Si-PKG). The package consists of a cavity formed by silicon crystalline anisotropic etching, through-silicon vias (TSVs) filled with electroplated Cu, bonding metals made of electroplated Ni/AuSn and a quartz lid for hermetic sealing. A deep-UV LED die is directly mounted in the Si-PKG by AuSn eutectic bonding without a submount. It has advantages in terms of size, heat dissipation, light utilization efficiency, productivity and cost over conventional AlN ceramic packages. We confirmed a light output of 30 mW and effective reflection on Si (111) cavity slopes in the Si-PKG. Based on simulation, further improvement of the optical output is expected by optimizing DUV-LED die mount condition.
KW - crystalline anisotropic etching
KW - deep ultraviolet LED
KW - hermetic sealing
KW - temporary bonding
KW - through-silicon via (TSV)
KW - wafer-level packaging
UR - http://www.scopus.com/inward/record.url?scp=85096965660&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85096965660&partnerID=8YFLogxK
U2 - 10.1002/eej.23298
DO - 10.1002/eej.23298
M3 - Article
AN - SCOPUS:85096965660
SN - 0424-7760
VL - 214
SP - 62
EP - 68
JO - Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
JF - Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
IS - 1
ER -