Development of strain and vibration sensor using magnetostriction of magnetic thin film

Yuito Kubo, Shuichiro Hashi, Hajime Yokoi, Kaoru Arai, Kazushi Ishiyama

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We fabricated a strain sensor using the inverse-magnetostrictive effect of magnetoelastic thin films, and applied it for vibration sensor. The sensor element consisted of 1 turn meander-patterned molybdenum (Mo) film as conductive layer and FeSiB magnetostrictive films that laminated a part of the meander. After annealing the element, the FeSiB films of the sensor element were subject to residual stress from Mo film and Si substrate, which induced a magnetic anisotropy of the FeSiB film via magnetoelastic coupling. From the impedance change of the element under compressive strain the sensor exhibited a gauge factor of 2, 160 at a carrier frequency of 150MHz under compressive strain. In addition, a phase-difference detection circuit was fabricated to evaluate the element as a vibration sensor. When an edge load of 20g was attached to the element, the maximum signal of 288mV (45mV/deg. ) correspond to vibration was obtained at the mechanical resonance frequency of 20. 8Hz.

Original languageEnglish
Pages (from-to)153-158
Number of pages6
JournalIEEJ Transactions on Sensors and Micromachines
Issue number4
Publication statusPublished - 2018


  • Inverse magnetostrictive effect
  • Magnetic thin film
  • Magnetostriction
  • Strain sensor
  • Vibration sensor

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering


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