TY - GEN
T1 - Development of variable temperature scanning microwave microscope for high throughput materials characterization
AU - Okazaki, Noriaki
AU - Okazaki, Sohei
AU - Takahashi, Ryota
AU - Murakami, Makoto
AU - Ahmet, Parhal
AU - Kakiuchi, Nobuyuki
AU - Furusho, Hitoshi
AU - Nishino, Taito
AU - Furubayashi, Yutaka
AU - Fukumura, Tomoteru
AU - Mastumoto, Yuji
AU - Kawasaki, Masashi
AU - Chikyow, Toyohiro
AU - Koinuma, Hideomi
AU - Hasegawa, Tetsuya
PY - 2006
Y1 - 2006
N2 - We developed a variable-temperature scanning microwave microscope (VT-SμM) that can perform high-throughput materials characterization in the temperature range between 4K and room temperature. As a sensor probe we used a high-Q coaxial cavity resonator, which was mounted on the low-temperature stage to allow variable-temperature measurements. We carried out systematic studies on the thermal degradation of the conducting polymers using the combinatorial libraries of polyaniline and polythiophene thin films, which showed rapid decrease of conductivity above the heating temperatures of 300°C and 250°C, respectively. The low-temperature performance of the VT-SμM was demonstrated by the measurement of composition-spread Nd1-xSr xMnO3 thin film, for which we succeeded in detecting the clear metal-insulator transition at 100K. We also propose a simple and easy method for the quantitative analysis of conductive thin films, by using the standard composition-spread thin films of Ti1-xNbxO 2.
AB - We developed a variable-temperature scanning microwave microscope (VT-SμM) that can perform high-throughput materials characterization in the temperature range between 4K and room temperature. As a sensor probe we used a high-Q coaxial cavity resonator, which was mounted on the low-temperature stage to allow variable-temperature measurements. We carried out systematic studies on the thermal degradation of the conducting polymers using the combinatorial libraries of polyaniline and polythiophene thin films, which showed rapid decrease of conductivity above the heating temperatures of 300°C and 250°C, respectively. The low-temperature performance of the VT-SμM was demonstrated by the measurement of composition-spread Nd1-xSr xMnO3 thin film, for which we succeeded in detecting the clear metal-insulator transition at 100K. We also propose a simple and easy method for the quantitative analysis of conductive thin films, by using the standard composition-spread thin films of Ti1-xNbxO 2.
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M3 - Conference contribution
AN - SCOPUS:33745334603
SN - 1558998489
SN - 9781558998483
T3 - Materials Research Society Symposium Proceedings
SP - 55
EP - 65
BT - Materials Research Society Symposium Proceedings
T2 - Combinatorial Methods and Informatics in Materials Science
Y2 - 28 November 2005 through 1 December 2005
ER -