Device Geometry Engineering for Controlling Organic Antiambipolar Transistor Properties

Kazuyoshi Kobashi, Ryoma Hayakawa, Toyohiro Chikyow, Yutaka Wakayama

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


The key concept behind this study is the use of "geometry engineering" to elucidate the carrier transport path and to control the device properties of organic antiambipolar transistors. Investigations of carrier transport properties with different device geometries, such as the pn-heterojunction length and the channel layer thickness, revealed that charge carriers transported through the lateral edge junction between p- and n-type channels. We also found that the peak voltage was effectively reduced from -49 to -39 V in a device with asymmetric channel lengths. These results suggest that device performance can be enhanced by taking advantage of the designability of the device geometry, which can employ the strong features of organic antiambipolar transistors.

Original languageEnglish
Pages (from-to)6943-6946
Number of pages4
JournalJournal of Physical Chemistry C
Issue number12
Publication statusPublished - 2018 Mar 29
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films


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