TY - JOUR
T1 - Device Geometry Engineering for Controlling Organic Antiambipolar Transistor Properties
AU - Kobashi, Kazuyoshi
AU - Hayakawa, Ryoma
AU - Chikyow, Toyohiro
AU - Wakayama, Yutaka
N1 - Funding Information:
This research was supported by the World Premier International Center (WPI) for Materials Nanoarchitectonics (MANA) of the National Institute for Materials Science (NIMS), Tsukuba, Japan, JSPS KAKENHI grant numbers JP15K13819 and JP23686051.
Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/3/29
Y1 - 2018/3/29
N2 - The key concept behind this study is the use of "geometry engineering" to elucidate the carrier transport path and to control the device properties of organic antiambipolar transistors. Investigations of carrier transport properties with different device geometries, such as the pn-heterojunction length and the channel layer thickness, revealed that charge carriers transported through the lateral edge junction between p- and n-type channels. We also found that the peak voltage was effectively reduced from -49 to -39 V in a device with asymmetric channel lengths. These results suggest that device performance can be enhanced by taking advantage of the designability of the device geometry, which can employ the strong features of organic antiambipolar transistors.
AB - The key concept behind this study is the use of "geometry engineering" to elucidate the carrier transport path and to control the device properties of organic antiambipolar transistors. Investigations of carrier transport properties with different device geometries, such as the pn-heterojunction length and the channel layer thickness, revealed that charge carriers transported through the lateral edge junction between p- and n-type channels. We also found that the peak voltage was effectively reduced from -49 to -39 V in a device with asymmetric channel lengths. These results suggest that device performance can be enhanced by taking advantage of the designability of the device geometry, which can employ the strong features of organic antiambipolar transistors.
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U2 - 10.1021/acs.jpcc.8b00015
DO - 10.1021/acs.jpcc.8b00015
M3 - Article
AN - SCOPUS:85044774270
SN - 1932-7447
VL - 122
SP - 6943
EP - 6946
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 12
ER -