Device-size dependence of field-free spin-orbit torque induced magnetization switching in antiferromagnet/ferromagnet structures

A. Kurenkov, C. Zhang, S. DuttaGupta, S. Fukami, H. Ohno

Research output: Contribution to journalArticlepeer-review

65 Citations (Scopus)

Abstract

We study spin-orbit torque induced magnetization switching in devices consisting of an antiferromagnetic PtMn and ferromagnetic Co/Ni multilayer with sizes ranging from 5 μm to 50 nm. As the size decreases, switching behavior changes from analogue-like to stepwise with several intermediate levels. The number of intermediate levels decreases with the decreasing size and finally evolves into a binary mode below a certain threshold. The results are found to be explained by a unique reversal process of this system, where ferromagnetic domains comprising a number of polycrystalline grains reverse individually and among the domains both out-of-plane and in-plane components of exchange bias vary.

Original languageEnglish
Article number092410
JournalApplied Physics Letters
Volume110
Issue number9
DOIs
Publication statusPublished - 2017 Feb 27

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