Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors

Y. Xu; R. Gwoziecki; R. Coppard; M. Benwadih; T. Minari; K. Tsukagoshi; J. A. Chroboczek; F. Balestra; G. Ghibaudo

doi:10.1063/1.3544583

Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors

Y. Xu, R. Gwoziecki, R. Coppard, M. Benwadih, T. Minari, K. Tsukagoshi, J. A. Chroboczek, F. Balestra, G. Ghibaudo

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A diagnostic procedure for the contact low-frequency noise sources of staggered organic transistors is presented. Like the conventional process for channel noise, the two models of carrier number fluctuations and Hooge mobility fluctuations are concerned. Both models apply to bis(triisopropylsilylethynyl) pentacene transistors at lower and higher current densities, where the contact defect density is 1000 times higher than that in the channel and a Hooge parameter around 1 is obtained, respectively. The Hooge mobility fluctuations model well accounts for the contact noise in pentacene transistors with a Hooge parameter in the range of 0.5-3.

Original language	English
Article number	033505
Journal	Applied Physics Letters
Volume	98
Issue number	3
DOIs	https://doi.org/10.1063/1.3544583
Publication status	Published - 2011 Jan 17
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors",

abstract = "A diagnostic procedure for the contact low-frequency noise sources of staggered organic transistors is presented. Like the conventional process for channel noise, the two models of carrier number fluctuations and Hooge mobility fluctuations are concerned. Both models apply to bis(triisopropylsilylethynyl) pentacene transistors at lower and higher current densities, where the contact defect density is 1000 times higher than that in the channel and a Hooge parameter around 1 is obtained, respectively. The Hooge mobility fluctuations model well accounts for the contact noise in pentacene transistors with a Hooge parameter in the range of 0.5-3.",

author = "Y. Xu and R. Gwoziecki and R. Coppard and M. Benwadih and T. Minari and K. Tsukagoshi and Chroboczek, {J. A.} and F. Balestra and G. Ghibaudo",

note = "Funding Information: This study was partially supported by the Grants-In-Aid for Scientific Research (Grant Nos. 17069004, 21241038, and 21750197) from MECSST (Japan) and also by the French project PRINTRONICS.",

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T1 - Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors

AU - Xu, Y.

AU - Gwoziecki, R.

AU - Coppard, R.

AU - Benwadih, M.

AU - Minari, T.

AU - Tsukagoshi, K.

AU - Chroboczek, J. A.

AU - Balestra, F.

AU - Ghibaudo, G.

N1 - Funding Information: This study was partially supported by the Grants-In-Aid for Scientific Research (Grant Nos. 17069004, 21241038, and 21750197) from MECSST (Japan) and also by the French project PRINTRONICS.

PY - 2011/1/17

Y1 - 2011/1/17

N2 - A diagnostic procedure for the contact low-frequency noise sources of staggered organic transistors is presented. Like the conventional process for channel noise, the two models of carrier number fluctuations and Hooge mobility fluctuations are concerned. Both models apply to bis(triisopropylsilylethynyl) pentacene transistors at lower and higher current densities, where the contact defect density is 1000 times higher than that in the channel and a Hooge parameter around 1 is obtained, respectively. The Hooge mobility fluctuations model well accounts for the contact noise in pentacene transistors with a Hooge parameter in the range of 0.5-3.

AB - A diagnostic procedure for the contact low-frequency noise sources of staggered organic transistors is presented. Like the conventional process for channel noise, the two models of carrier number fluctuations and Hooge mobility fluctuations are concerned. Both models apply to bis(triisopropylsilylethynyl) pentacene transistors at lower and higher current densities, where the contact defect density is 1000 times higher than that in the channel and a Hooge parameter around 1 is obtained, respectively. The Hooge mobility fluctuations model well accounts for the contact noise in pentacene transistors with a Hooge parameter in the range of 0.5-3.

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Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors

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