Diameter dependence of the Raman (formula presented)-band in isolated single-wall carbon nanotubes

S. D.M. Brown; A. G. Souza Filho; C. M. Lieber; M. S. Dresselhaus; M. A. Pimenta; A. Jorio; G. Dresselhaus; J. H. Hafner; R. Saito

doi:10.1103/PhysRevB.64.041401

Diameter dependence of the Raman (formula presented)-band in isolated single-wall carbon nanotubes

S. D.M. Brown, A. G. Souza Filho, C. M. Lieber, M. S. Dresselhaus, M. A. Pimenta, A. Jorio, G. Dresselhaus, J. H. Hafner, R. Saito

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Raman D-band spectra are reported for several different SWNTs using two different laser energies (formula presented) and 2.41 eV). At a fixed (formula presented) individual isolated SWNTs exhibit different diameter-dependent D-band frequencies (formula presented) around an average value. For both semiconducting and metallic tubes, (formula presented) decreases with decreasing nanotube diameter, though (formula presented) for isolated metallic SWNTs is higher than for isolated semiconducting SWNTs. The average D-band frequency depends linearly on (formula presented) as previously observed for SWNT bundles, suggesting that the D-band in SWNTs is activated by defects or by the finite size of the SWNTs.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	64
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.64.041401
Publication status	Published - 2001
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1103/PhysRevB.64.041401

Cite this

@article{cd31cf1e184b40489473e77562993d75,

title = "Diameter dependence of the Raman (formula presented)-band in isolated single-wall carbon nanotubes",

abstract = "Raman D-band spectra are reported for several different SWNTs using two different laser energies (formula presented) and 2.41 eV). At a fixed (formula presented) individual isolated SWNTs exhibit different diameter-dependent D-band frequencies (formula presented) around an average value. For both semiconducting and metallic tubes, (formula presented) decreases with decreasing nanotube diameter, though (formula presented) for isolated metallic SWNTs is higher than for isolated semiconducting SWNTs. The average D-band frequency depends linearly on (formula presented) as previously observed for SWNT bundles, suggesting that the D-band in SWNTs is activated by defects or by the finite size of the SWNTs.",

author = "Brown, {S. D.M.} and {Souza Filho}, {A. G.} and Lieber, {C. M.} and Dresselhaus, {M. S.} and Pimenta, {M. A.} and A. Jorio and G. Dresselhaus and Hafner, {J. H.} and R. Saito",

year = "2001",

doi = "10.1103/PhysRevB.64.041401",

language = "English",

volume = "64",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "0163-1829",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Diameter dependence of the Raman (formula presented)-band in isolated single-wall carbon nanotubes

AU - Brown, S. D.M.

AU - Souza Filho, A. G.

AU - Lieber, C. M.

AU - Dresselhaus, M. S.

AU - Pimenta, M. A.

AU - Jorio, A.

AU - Dresselhaus, G.

AU - Hafner, J. H.

AU - Saito, R.

PY - 2001

Y1 - 2001

N2 - Raman D-band spectra are reported for several different SWNTs using two different laser energies (formula presented) and 2.41 eV). At a fixed (formula presented) individual isolated SWNTs exhibit different diameter-dependent D-band frequencies (formula presented) around an average value. For both semiconducting and metallic tubes, (formula presented) decreases with decreasing nanotube diameter, though (formula presented) for isolated metallic SWNTs is higher than for isolated semiconducting SWNTs. The average D-band frequency depends linearly on (formula presented) as previously observed for SWNT bundles, suggesting that the D-band in SWNTs is activated by defects or by the finite size of the SWNTs.

AB - Raman D-band spectra are reported for several different SWNTs using two different laser energies (formula presented) and 2.41 eV). At a fixed (formula presented) individual isolated SWNTs exhibit different diameter-dependent D-band frequencies (formula presented) around an average value. For both semiconducting and metallic tubes, (formula presented) decreases with decreasing nanotube diameter, though (formula presented) for isolated metallic SWNTs is higher than for isolated semiconducting SWNTs. The average D-band frequency depends linearly on (formula presented) as previously observed for SWNT bundles, suggesting that the D-band in SWNTs is activated by defects or by the finite size of the SWNTs.

UR - http://www.scopus.com/inward/record.url?scp=85038289868&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85038289868&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.64.041401

DO - 10.1103/PhysRevB.64.041401

M3 - Article

AN - SCOPUS:85038289868

SN - 0163-1829

VL - 64

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 4

ER -

Diameter dependence of the Raman (formula presented)-band in isolated single-wall carbon nanotubes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this