Abstract
Diamond deposition on WC-Co cemented carbide was examined by chemical vapour deposition using a tantalum filament. The filament was much superior to conventional tungsten filament for high-temperature use. Diamond film was deposited at a filament temperature up to about 2600 °C for tantalum filament, which was much higher than the maximum filament temperature available for tungsten (2000 °C). The critical methane concentration in H2-CH4 gas for diamond deposition became higher with increasing filament temperature. A deposition rate about 20 times higher was obtained when using a tantalum filament compared with a tungsten filament. The origin of the improved deposition rate of diamond on WC-Co substrate using a tantalum filament is discussed.
| Original language | English |
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| Pages (from-to) | 4472-4476 |
| Number of pages | 5 |
| Journal | Journal of Materials Science |
| Volume | 25 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1990 Oct |