Diamond epitaxial growth by gas-source molecular beam epitaxy with pure methane

Toshihiko Nishimori; Hitoshi Sakamoto; Yuji Takakuwa; Shozo Kono

doi:10.1143/JJAP.34.L1297

Diamond epitaxial growth by gas-source molecular beam epitaxy with pure methane

Toshihiko Nishimori, Hitoshi Sakamoto, Yuji Takakuwa, Shozo Kono

Micro System Integration Center (μSIC)

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Diamond epitaxial films with a thickness of 200-350 A have been successfully grown on C(l00) surfaces by gas- source molecular beam epitaxy (GSMBE) with methane without addition of hydrogen or oxygen. The activation energy was measured by a selective growth method using Ta-patterned substrates to be 15 kcal/mol. This value is close to the activation energy of H₂desorption on C(l00), suggesting that the diamond epitaxial growth rate by this GSM BE is limited by hydrogen desorption.

Original language	English
Pages (from-to)	L1297-L1300
Journal	Japanese journal of applied physics
Volume	34
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.34.L1297
Publication status	Published - 1995 Oct

Keywords

Diamond
Epitaxial film
Gas source MBE
Methane
RHEED
Selective growth
XPS

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.34.L1297

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abstract = "Diamond epitaxial films with a thickness of 200-350 A have been successfully grown on C(l00) surfaces by gas- source molecular beam epitaxy (GSMBE) with methane without addition of hydrogen or oxygen. The activation energy was measured by a selective growth method using Ta-patterned substrates to be 15 kcal/mol. This value is close to the activation energy of H2desorption on C(l00), suggesting that the diamond epitaxial growth rate by this GSM BE is limited by hydrogen desorption.",

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author = "Toshihiko Nishimori and Hitoshi Sakamoto and Yuji Takakuwa and Shozo Kono",

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month = oct,

doi = "10.1143/JJAP.34.L1297",

language = "English",

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T1 - Diamond epitaxial growth by gas-source molecular beam epitaxy with pure methane

AU - Nishimori, Toshihiko

AU - Sakamoto, Hitoshi

AU - Takakuwa, Yuji

AU - Kono, Shozo

PY - 1995/10

Y1 - 1995/10

N2 - Diamond epitaxial films with a thickness of 200-350 A have been successfully grown on C(l00) surfaces by gas- source molecular beam epitaxy (GSMBE) with methane without addition of hydrogen or oxygen. The activation energy was measured by a selective growth method using Ta-patterned substrates to be 15 kcal/mol. This value is close to the activation energy of H2desorption on C(l00), suggesting that the diamond epitaxial growth rate by this GSM BE is limited by hydrogen desorption.

AB - Diamond epitaxial films with a thickness of 200-350 A have been successfully grown on C(l00) surfaces by gas- source molecular beam epitaxy (GSMBE) with methane without addition of hydrogen or oxygen. The activation energy was measured by a selective growth method using Ta-patterned substrates to be 15 kcal/mol. This value is close to the activation energy of H2desorption on C(l00), suggesting that the diamond epitaxial growth rate by this GSM BE is limited by hydrogen desorption.

KW - Diamond

KW - Epitaxial film

KW - Gas source MBE

KW - Methane

KW - RHEED

KW - Selective growth

KW - XPS

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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Diamond epitaxial growth by gas-source molecular beam epitaxy with pure methane

Abstract

Keywords

ASJC Scopus subject areas

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