Diamond epitaxial growth by gas-source molecular beam epitaxy with pure methane

Toshihiko Nishimori, Hitoshi Sakamoto, Yuji Takakuwa, Shozo Kono

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Diamond epitaxial films with a thickness of 200-350 A have been successfully grown on C(l00) surfaces by gas- source molecular beam epitaxy (GSMBE) with methane without addition of hydrogen or oxygen. The activation energy was measured by a selective growth method using Ta-patterned substrates to be 15 kcal/mol. This value is close to the activation energy of H2desorption on C(l00), suggesting that the diamond epitaxial growth rate by this GSM BE is limited by hydrogen desorption.

Original languageEnglish
Pages (from-to)L1297-L1300
JournalJapanese journal of applied physics
Issue number10
Publication statusPublished - 1995 Oct


  • Diamond
  • Epitaxial film
  • Gas source MBE
  • Methane
  • Selective growth
  • XPS

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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