TY - JOUR
T1 - Dibenzo[a,e]pentalene-embedded dicyanomethylene-substituted thienoquinoidals for n-channel organic semiconductors
T2 - Synthesis, properties, and device characteristics
AU - Nakano, Masahiro
AU - Osaka, Itaru
AU - Takimiya, Kazuo
N1 - Publisher Copyright:
© The Royal Society of Chemistry.
PY - 2015/1/14
Y1 - 2015/1/14
N2 - Dibenzo[a,e]pentalene-embedded thienoquinoidals with dicyanomethylene termini were synthesized as new π-extended thienoquinoidals for n-type organic semiconductors. Single crystal X-ray analysis demonstrated that the target molecule has an all trans-polyene structure with reasonable bond-length alternation in the thienoquinoidal strand, indicative of effective extension of the π-conjugation system. Thanks to their π-extended structures, not just the low-lying LUMO energy levels (-4.2 to -4.3 eV) but also relatively high HOMO energy levels (∼-5.6 eV) were characterized by means of cyclic voltammetry. Interestingly, depending on the position of the solubilizing long alkyl groups, they formed H- or J-aggregate-like structures in the thin-film state testified by the thin film absorption spectra. These distinct intermolecular interactions in the thin film state could cause different behaviours in thin-film field-effect transistors; for the former ambipolar characteristics were observed, whereas only n-type response was detected for the latter.
AB - Dibenzo[a,e]pentalene-embedded thienoquinoidals with dicyanomethylene termini were synthesized as new π-extended thienoquinoidals for n-type organic semiconductors. Single crystal X-ray analysis demonstrated that the target molecule has an all trans-polyene structure with reasonable bond-length alternation in the thienoquinoidal strand, indicative of effective extension of the π-conjugation system. Thanks to their π-extended structures, not just the low-lying LUMO energy levels (-4.2 to -4.3 eV) but also relatively high HOMO energy levels (∼-5.6 eV) were characterized by means of cyclic voltammetry. Interestingly, depending on the position of the solubilizing long alkyl groups, they formed H- or J-aggregate-like structures in the thin-film state testified by the thin film absorption spectra. These distinct intermolecular interactions in the thin film state could cause different behaviours in thin-film field-effect transistors; for the former ambipolar characteristics were observed, whereas only n-type response was detected for the latter.
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U2 - 10.1039/c4tc02164a
DO - 10.1039/c4tc02164a
M3 - Article
AN - SCOPUS:84918558778
SN - 2050-7526
VL - 3
SP - 283
EP - 290
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 2
ER -