TY - JOUR
T1 - Die-level 3-D integration technology for rapid prototyping of high-performance multifunctionality hetero-integrated systems
AU - Lee, Kang Wook
AU - Ohara, Yuki
AU - Kiyoyama, Kouji
AU - Bea, Ji Cheol
AU - Murugesan, Mariappan
AU - Fukushima, Takafumi
AU - Tanaka, Tetsu
AU - Koyanagi, Mitsumasa
PY - 2013
Y1 - 2013
N2 - We proposed a die-level 3-D integration technology for rapid prototyping of high-performance multifunctionality hetero-integrated systems. Commercially available 2-D chips with different functions and sizes could be processed and integrated in die level. To realize the die-level 3-D integration, fine-sized backside through silicon via (TSV) and novel detachable technologies are developed. In this paper, we demonstrated a prototype 3-D stacked image sensor system using the die-level 3-D integration technology. Three different functional chips of CMOS image sensor, correlated double sampling, and analog-to-digital converter, which were fabricated by different technologies, were processed to form fine-sized backside Cu TSV of 5- m diameter and metal microbumps in die level. Each chip was sequentially stacked after evaluating the basic function to form a known-good-die 3-D stacked system. The fundamental characteristics of each functional chip were successfully evaluated in the fabricated prototype 3-D stacked image sensor system.
AB - We proposed a die-level 3-D integration technology for rapid prototyping of high-performance multifunctionality hetero-integrated systems. Commercially available 2-D chips with different functions and sizes could be processed and integrated in die level. To realize the die-level 3-D integration, fine-sized backside through silicon via (TSV) and novel detachable technologies are developed. In this paper, we demonstrated a prototype 3-D stacked image sensor system using the die-level 3-D integration technology. Three different functional chips of CMOS image sensor, correlated double sampling, and analog-to-digital converter, which were fabricated by different technologies, were processed to form fine-sized backside Cu TSV of 5- m diameter and metal microbumps in die level. Each chip was sequentially stacked after evaluating the basic function to form a known-good-die 3-D stacked system. The fundamental characteristics of each functional chip were successfully evaluated in the fabricated prototype 3-D stacked image sensor system.
KW - Backside through silicon via (TSV)
KW - die-level 3-D integration
KW - hetero-integrated system
UR - http://www.scopus.com/inward/record.url?scp=84887243347&partnerID=8YFLogxK
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U2 - 10.1109/TED.2013.2280273
DO - 10.1109/TED.2013.2280273
M3 - Article
AN - SCOPUS:84887243347
SN - 0018-9383
VL - 60
SP - 3842
EP - 3848
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 11
M1 - 6601012
ER -