Dielectric properties of Ba-Ti-O thin films prepared by MOCVD

H. Masumoto; T. Tohma; T. Goto; T. Smirnova; Y. Masuda; T. Hirai

Dielectric properties of Ba-Ti-O thin films prepared by MOCVD

H. Masumoto, T. Tohma, T. Goto, T. Smirnova, Y. Masuda, T. Hirai

FRIS - Advanced Interdisciplinary Research Division

Tohoku University

Research output: Contribution to conference › Paper › peer-review

Abstract

BaTiO₃ films were deposited by MOCVD at temperature of 973 K and total pressure of 0.2 to 0.8 kPa on Pt - coated fused silica and (100)MgO substrates. Ba(DPM)₂ and Ti(O-i-C₃H₇)₂(DPM)₂ were used as Ba and Ti sources, respectively. BaTiO₃ films in single phase were obtained when the films were deposited at 973 K and Ba/Ti ratio of 0.25 to 0.35. The grain size of BaTiO₃ films increased with decreasing total pressure. BaTiO₃ polycrystalline films with thickness of 1 μm had dielectric constant of 480, loss tangent of 0.03 and electrical resistivity of 2.1 MΩm at room temperature.

Original language	English
Pages	841-844
Number of pages	4
Publication status	Published - 2000
Event	12th IEEE International Symposium on Applications of Ferroelectrics - Honolulu, HI, United States Duration: 2000 Jul 21 → 2000 Aug 2

Conference

Conference	12th IEEE International Symposium on Applications of Ferroelectrics
Country/Territory	United States
City	Honolulu, HI
Period	00/7/21 → 00/8/2

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@conference{6d1ea1e110c1412bab02610755224362,

title = "Dielectric properties of Ba-Ti-O thin films prepared by MOCVD",

abstract = "BaTiO3 films were deposited by MOCVD at temperature of 973 K and total pressure of 0.2 to 0.8 kPa on Pt - coated fused silica and (100)MgO substrates. Ba(DPM)2 and Ti(O-i-C3H7)2(DPM)2 were used as Ba and Ti sources, respectively. BaTiO3 films in single phase were obtained when the films were deposited at 973 K and Ba/Ti ratio of 0.25 to 0.35. The grain size of BaTiO3 films increased with decreasing total pressure. BaTiO3 polycrystalline films with thickness of 1 μm had dielectric constant of 480, loss tangent of 0.03 and electrical resistivity of 2.1 MΩm at room temperature.",

author = "H. Masumoto and T. Tohma and T. Goto and T. Smirnova and Y. Masuda and T. Hirai",

year = "2000",

language = "English",

pages = "841--844",

note = "12th IEEE International Symposium on Applications of Ferroelectrics ; Conference date: 21-07-2000 Through 02-08-2000",

}

TY - CONF

T1 - Dielectric properties of Ba-Ti-O thin films prepared by MOCVD

AU - Masumoto, H.

AU - Tohma, T.

AU - Goto, T.

AU - Smirnova, T.

AU - Masuda, Y.

AU - Hirai, T.

PY - 2000

Y1 - 2000

N2 - BaTiO3 films were deposited by MOCVD at temperature of 973 K and total pressure of 0.2 to 0.8 kPa on Pt - coated fused silica and (100)MgO substrates. Ba(DPM)2 and Ti(O-i-C3H7)2(DPM)2 were used as Ba and Ti sources, respectively. BaTiO3 films in single phase were obtained when the films were deposited at 973 K and Ba/Ti ratio of 0.25 to 0.35. The grain size of BaTiO3 films increased with decreasing total pressure. BaTiO3 polycrystalline films with thickness of 1 μm had dielectric constant of 480, loss tangent of 0.03 and electrical resistivity of 2.1 MΩm at room temperature.

AB - BaTiO3 films were deposited by MOCVD at temperature of 973 K and total pressure of 0.2 to 0.8 kPa on Pt - coated fused silica and (100)MgO substrates. Ba(DPM)2 and Ti(O-i-C3H7)2(DPM)2 were used as Ba and Ti sources, respectively. BaTiO3 films in single phase were obtained when the films were deposited at 973 K and Ba/Ti ratio of 0.25 to 0.35. The grain size of BaTiO3 films increased with decreasing total pressure. BaTiO3 polycrystalline films with thickness of 1 μm had dielectric constant of 480, loss tangent of 0.03 and electrical resistivity of 2.1 MΩm at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=0034473945&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034473945&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034473945

SP - 841

EP - 844

T2 - 12th IEEE International Symposium on Applications of Ferroelectrics

Y2 - 21 July 2000 through 2 August 2000

ER -

Dielectric properties of Ba-Ti-O thin films prepared by MOCVD

Abstract

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